A wide range of bipolar transistors helps you easily fulfil your system requirements. That includes simple bipolar building blocks and a comprehensive range of space and cost saving resistor-equipped transistors right up to our Breakthrough In Small Signal series of low VCEsat devices.
Our extensive diode portfolio offers the flexibility you need in today's market - whether it is a simple Zener, a highly efficient Schottky rectifier, a fast recovery or controlled avalanche switching diode.
Covering ESD protection and TVS devices as well as common-mode choke and EMI filtering, Nexperia's protection technologies continue to evolve to offer the highest level of protection in the industry's smallest packages.
Nexperia offers a broad portfolio of low- / middle-voltage (12-200 V) P- and N-channel silicon MOSFETs in a wide range of space-saving and efficient package options.
Raising the bar for safe, robust and reliable power switching, Nexperia’s 1200 V Silicon Carbide (SiC) MOSFETs are the product of choice for electric vehicle charging infrastructure, photovoltaic inverters, and motor drives.
For a variety of high-voltage (650 V) and low-voltage (40-150 V) applications Nexperia GaN FETs deliver the fastest transition / switching capability , best power efficiency and enhanced power density through reduced conduction and switching losses.
Addressing the growing demand for efficient, high-voltage power conversion and motor drives, Nexperia's IGBTs feature a robust and cost-effective carrier stored trench-gate (CSTBT) advanced field-stop (FS) construction.
Alongside a comprehensive portfolio of logic functions, analog switches and I²C interface portfolio, Nexperia delivers a grwoing range of power ICs that enable innovative solutions focused on reducing our customer’s BOM cost, improving system efficiency and robustness.
Helping enable connected electric and hybrid vehicles, Nexperia's offers fully qualified AEC-Q100/Q101 devices from across our complete portfolio of energy- and design-efficient products.
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Click here for more information650 V, 40 A trench field-stop IGBT with full rated silicon diode
The NGW40T65H3DFP is a robust Insulated-Gate Bipolar Transistor (IGBT) featuring third-generation technology. It combines carrier stored trench-gate and field-stop (FS) structures. The NGW40T65H3DFP is rated to 175 °C with optimized IGBT turn-off losses. This hard-switching 650 V, 40 A IGBT is optimized for high-voltage, high-frequency industrial power inverter applications.
Device current is rated at 40 A
Low conduction and switching losses
Stable and tight parameters for easy parallel operation
Maximum junction temperature 175 °C
Fully rated and fast reverse recovery diode
HV-H3TRB qualified
Power inverters such as
Uninterruptible Power Supply (UPS) inverter
EV charging converter
Power Factor Correction (PFC)
Induction heating
Welding
| Type number | Product status | VCE [max] (V) | IC [typ] (A) | Configuration | Tj [min] (°C) | Tj [max] (°C) | Package version | Package name |
|---|---|---|---|---|---|---|---|---|
| NGW40T65H3DFP | Production | 650 | 40 | HS | -40 | 175 | SOT429-5 | TO-247-3 |
| Type number | Orderable part number, (Ordering code (12NC)) | Status | Marking | Package | Package information | Reflow-/Wave soldering | Packing |
|---|---|---|---|---|---|---|---|
| NGW40T65H3DFP | NGW40T65H3DFPQ (934668962127) |
Active | W40T65H3DFP |
TO‑247‑3 (SOT429-5) |
SOT429-5 | SOT429-5_127 | |
| NGW40T65H3DFP/A00Z (934671640347) |
Active | W40T65H3DFP | Not available | ||||
| NGW40T65H3DFPZ (934668962347) |
Development | W40T65H3DFP | Not available |
| Type number | Orderable part number | Chemical content | RoHS | RHF-indicator |
|---|---|---|---|---|
| NGW40T65H3DFP | NGW40T65H3DFPQ | NGW40T65H3DFP |
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| NGW40T65H3DFP | NGW40T65H3DFP/A00Z | NGW40T65H3DFP |
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| NGW40T65H3DFP | NGW40T65H3DFPZ | NGW40T65H3DFP |
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| File name | Title | Type | Date |
|---|---|---|---|
| NGW40T65H3DFP | 650 V, 40 A trench field-stop IGBT with full rated silicon diode | Data sheet | 2025-11-11 |
| AN90042 | Nexperia 650 V (G3) IGBT product introduction | Application note | 2025-08-06 |
| Nexperia_IGBT_650V_15A-75A_LTSpice_models | SPICE models for Nexperia IGBTs of 650 V (15 A - 75 A) | Design support | 2025-11-12 |
| Nexperia_IGBT_650V_15A-75A_PLECS_models | Thermal models for Nexperia IGBTs of 650 V (15 A - 75 A) | Design support | 2025-11-12 |
| SOT429-5 | Plastic single-ended through-hole package; heatsink mounted; 1 mounting hole; 3-lead TO-247-3 | Package information | 2025-11-03 |
| SOT429-5_127 | TO-247-3L; Tube pack; Standard product orientation | Packing information | 2025-11-11 |
If you are in need of design/technical support, let us know and fill in the answer form we'll get back to you shortly.
The Nexperia Longevity Program is aimed to provide our customers information from time to time about the expected time that our products can be ordered. The NLP is reviewed and updated regularly by our Executive Management Team. View our longevity program here.
| File name | Title | Type | Date |
|---|---|---|---|
| Nexperia_IGBT_650V_15A-75A_LTSpice_models | SPICE models for Nexperia IGBTs of 650 V (15 A - 75 A) | Design support | 2025-11-12 |
| Nexperia_IGBT_650V_15A-75A_PLECS_models | Thermal models for Nexperia IGBTs of 650 V (15 A - 75 A) | Design support | 2025-11-12 |
| Type number | Orderable part number | Ordering code (12NC) | Status | Packing | Packing Quantity | Buy online |
|---|---|---|---|---|---|---|
| NGW40T65H3DFP | NGW40T65H3DFPQ | 934668962127 | Active | SOT429-5_127 | 450 |
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| NGW40T65H3DFP | NGW40T65H3DFP/A00Z | 934671640347 | Active | Not available | 240 |
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As a Nexperia customer you can order samples via our sales organization.
If you do not have a direct account with Nexperia our network of global and regional distributors is available and equipped to support you with Nexperia samples. Check out the list of official distributors.
The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.