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PSMN015-100YSF

NextPower 100 V, 14.7 mOhm N-channel MOSFET in LFPAK56 package

NextPower 100 V, standard level gate drive MOSFET. Qualified to 175 °C and recommended for industrial and consumer applications.

Features and benefits

  • Low Qrr for higher efficiency and lower spiking
  • Low QG × RDSon FOM for high efficiency switching applications
  • Strong avalanche energy rating (EAS)
  • Avalanche rated and 100% tested
  • Ha-free and RoHS compliant LFPAK56 package
  • Wave-solderable LFPAK56 package

Applications

  • Synchronous rectifier in AC-DC and DC-DC
  • Primary side switch – 48 V DC-DC
  • BLDC motor control
  • USB-PD and mobile fast-charge adapters
  • Flyback and resonant topologies

Parametrics

Type numberPackage versionPackage nameProduct statusChannel typeNumber of transistorsVDS [max] (V)RDSon [max] @ VGS = 10 V (mΩ)Tj [max] (°C)ID [max] (A)QGD [typ] (nC)QG(tot) [typ] @ VGS = 10 V (nC)Ptot [max] (W)Qr [typ] (nC)VGSth [typ] (V)Automotive qualifiedCiss [typ] (pF)Coss [typ] (pF)Date
PSMN015-100YSFSOT669LFPAK56; Power-SO8DevelopmentN110014.7175424.42210426.43N15503402021-01-19

Documentation (7)

File nameTitleTypeDate
PSMN015-100YSFNextPower 100 V, 14.7 mOhm N-channel MOSFET in LFPAK56 packageData sheet2021-01-25
AN11158Understanding power MOSFET data sheet parametersApplication note2020-07-06
AN11261RC Thermal ModelsApplication note2021-03-18
AN90003LFPAK MOSFET thermal design guideApplication note2021-01-22
SOT6693D model for products with SOT669 packageDesign support2017-06-30
REFLOW_BG-BD-1Reflow soldering profileReflow soldering2021-04-06
WAVE_BG-BD-1Wave soldering profileWave soldering2021-09-08

Support

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Models

File nameTitleTypeDate
SOT6693D model for products with SOT669 packageDesign support2017-06-30