PSMN7R8-120ES

N-channel 120 V 7.9 mΩ standard level MOSFET in I2PAK

Standard level N-channel MOSFET in I2PAK package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic power supply equipment.

Features

  • High efficiency due to low switching and conduction losses
  • Improved dynamic avalanche performance
  • Suitable for standard level gate drive
  • I2PAK package for slimline adaptors & height constrained applications

Target applications

  • AC-to-DC power supply
  • Synchronous rectification
  • Motor control
  • Slimline adaptors & chargers

Parametrics

Type numberPackage versionPackage nameProduct statusChannel typeNumber of transistorsVDS [max] (V)RDSon [max] @ VGS = 10 V (mΩ)Tj [max] (°C)ID [max] (A)QGD [typ] (nC)QG(tot) [typ] @ VGS = 10 V (nC)Ptot [max] (W)Qr [typ] (nC)VGSth [typ] (V)Automotive qualifiedCiss [typ] (pF)Coss [typ] (pF)Date
PSMN7R8-120ESSOT226I2PAKProductionN11207.91757050.51673492643N94734412013-01-07

Package

Type numberPackageOutline versionReflow-/Wave solderingPackingStatusMarkingOrderable part number, (Ordering code (12NC))
PSMN7R8-120ES
I2PAK
(SOT226)
SOT226Horizontal, Rail PackActivePSMN7R8-120ESPSMN7R8-120ESQ
( 9340 674 49127 )

Quality, reliability & chemical content

Type numberOrderable part numberChemical contentRoHS / RHFLeadfree conversion dateIFRMTBF (hour)MSLMSL leadfree
PSMN7R8-120ESPSMN7R8-120ESQPSMN7R8-120ES0.3263.07E9NANA
Quality and reliability disclaimer

Documentation (13)

File nameTitleTypeDate
PSMN7R8-120ESN-channel 120 V, 7.8 mΩ standard level MOSFET in I2PAKData sheet2018-04-02
AN10273Power MOSFET single-shot and repetitive avalanche ruggedness ratingApplication note2015-12-10
AN10874LFPAK MOSFET thermal design guideApplication note2018-04-24
AN11113LFPAK MOSFET thermal design guide - Part 2Application note2018-04-24
AN11160Designing RC SnubbersApplication note2012-10-01
AN11156Using Power MOSFET Zth CurvesApplication note2012-10-10
AN11243Failure signature of Electrical Overstress on Power MOSFETsApplication note2017-12-21
AN11261Using RC Thermal ModelsApplication note2014-05-19
AN11599Using power MOSFETs in parallelApplication note2016-07-13
PSMN7R8-120ESPSMN7R8-120ES Spice modelSPICE model2013-01-14
TN00008Power MOSFET frequently asked questions and answersTechnical note2016-10-31
PSMN7R8-120ESPSMN7R8-120ES Thermal modelThermal model2013-01-14
SOT226plastic, single-ended package (I2PAK); 3 terminals; 2.54 mm pitch; 11 mm x 10 mm x 4.3 mm bodyOutline drawing2017-01-30

Support

Find answers to your design questions on this page. If available you can find information in our Nexperia Support Community or you can find Nexperia models and Design tools.

Models

File nameTitleTypeDate
PSMN7R8-120ESPSMN7R8-120ES Spice modelSPICE model2013-01-14
PSMN7R8-120ESPSMN7R8-120ES Thermal modelThermal model2013-01-14

Ordering

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Sample

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