N-channel 30 V, 3.0 mOhm, logic level Trench MOSFET in MLPAK33

General purpose MOSFET for standard applications, 87 A, logic level N-channel enhancement mode Power MOSFET in MLPAK33 package.

Features and benefits

  • Logic level compatibility

  • Trench MOSFET technology

  • Thermally efficient package in a small form factor (3.3 mm x 3.3 mm footprint)


  • Secondary side synchronous rectification

  • DC-to-DC converters

  • Battery Management System

  • Motor drive

  • Load switching


Type numberProduct statusDate

PCB Symbol, Footprint and 3D Model

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Documentation (17)

File nameTitleTypeDate
AN10441Level shifting techniques in I2C-bus designApplication note2020-02-11
AN10273Power MOSFET single-shot and repetitive avalanche ruggedness ratingApplication note2022-06-20
AN11158Understanding power MOSFET data sheet parametersApplication note2020-07-06
AN11119Medium power small-signal MOSFETs in DC-to-DC conversionApplication note2013-05-07
AN11160Designing RC SnubbersApplication note2023-02-03
AN11156Using Power MOSFET Zth CurvesApplication note2021-01-04
AN11243Failure signature of Electrical Overstress on Power MOSFETsApplication note2017-12-21
AN11304MOSFET load switch PCB with thermal measurementApplication note2013-01-28
AN11261RC Thermal ModelsApplication note2021-03-18
AN11599Using power MOSFETs in parallelApplication note2016-07-13
AN90001Designing in MOSFETs for safe and reliable gate-drive operationApplication note2017-05-05
AN90011Half-bridge MOSFET switching and its impact on EMCApplication note2020-04-28
AN90017Load switches for mobile and computing applicationsApplication note2020-09-02
AN50005Paralleling power MOSFETs in high power applicationsApplication note2021-09-13
AN90032Low temperature soldering, application studyApplication note2022-02-22
AN50014Understanding the MOSFET peak drain current ratingApplication note2022-03-28
AN50006Power MOSFETs in linear modeApplication note2022-04-12


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PCB Symbol, Footprint and 3D Model

Model NameDescription

How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.