Features and benefits
- Trench MOSFET technology
- Very low threshold voltage for portable applications: VGS(th) = 0.7 V
- Leadless ultra small and ultra thin SMD plastic package: 1.1 × 1.0 × 0.37 mm
- ElectroStatic Discharge (ESD) protection > 2 kV HBM
- Relay driver
- High-speed line driver
- Level shifter
- Power management in battery-driven portables
|Type number||Package version||Package name||Product status||Channel type||Number of transistors||VDS [max] (V)||VGS [max] (V)||RDSon [max] @ VGS = 4.5 V (mΩ)||RDSon [max] @ VGS = 2.5 V (mΩ)||Tj [max] (°C)||ID [max] (A)||QGD [typ] (nC)||QG(tot) [typ] @ VGS = 4.5 V (nC)||Ptot [max] (W)||VGSth [typ] (V)||Automotive qualified||Ciss [typ] (pF)||Coss [typ] (pF)||Date|
|PMCXB1000UE||30 V, complementary N/P-channel Trench MOSFET||Data sheet||2017-05-09|
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Ordering, pricing & availability
|Type number||Orderable part number||Ordering code (12NC)||Packing||Buy online|
|PMCXB1000UE||PMCXB1000UEZ||934070041147||Reel 7" Q2/T3||Order product|
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