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Nexperia launches new hotswap Application Specific MOSFETs (ASFETs) with double the improvement in SOA

November 18, 2022

Nijmegen -- Fully optimised RDS(on) & SOA manage in-rush currents in 12 V hotswap and soft start applications

Nexperia, the expert in essential semiconductors, today extends its ‘ASFETs for Hotswap and Soft Start’ portfolio with the introduction of 10 new 25 V and 30 V fully optimized devices, combining industry-leading enhanced safe operating area (SOA) performance with extremely low RDS(on), making them ideal for use in 12 V hotswap applications including data center servers and communications equipment.

For several years, Nexperia has been combining proven MOSFET expertise and broad application understanding to develop market-leading ASFETs, devices in which critical MOSFET performance characteristics are enhanced to meet the requirements of particular applications. Since the launch of ASFETs, success has been seen with products optimized for battery isolation, DC motor control, Power-over-Ethernet, automotive airbag applications and more.

In-rush currents can present a reliability challenge in hotswap applications. Nexperia, the original pioneer of enhanced SOA MOSFETs, have addressed this concern by designing a portfolio of ‘ASFETs for Hotswap and Soft Start with enhanced SOA’ that are fully optimized for such applications. The PSMNR67-30YLE ASFET delivers 2.2x stronger SOA (12 V @100 mS) than previous technologies while having an RDS(on) (max) as low as 0.7 mΩ. The Spirito effect (represented by the steeper downward slope found on SOA curves at higher voltages) has been eliminated, while exceptional performance is maintained across the full voltage and temperature range (compared to unoptimized devices).

Nexperia further supports designers by removing the need to thermally de-rate designs, by fully characterizing these new devices at 125 °C and providing hot SOA datasheet curves.

With eight new devices (three 25 V and five 30 V) available in a choice of LFPAK56 & LFPAK56E packages with RDS(on) ranging from 0.7 mΩ to 2 mΩ, the majority of hotswap and soft start applications are addressed. Two additional 25 V products (which will have an even lower RDS(on) of 0.5 mΩ) are planned for release over the coming months.

For more information, please visit: nexperia.com/asfets-for-hotswap-and-soft-start

About Nexperia

Nexperia is a leading expert in the high-volume production of essential semiconductors, components that are required by every electronic design in the world. The company’s extensive portfolio includes diodes, bipolar transistors, ESD protection devices, MOSFETs, GaN FETs and analog & logic ICs. Headquartered in Nijmegen, the Netherlands, Nexperia annually ships more than 100 billion products, meeting the stringent standards set by the automotive industry. These products are recognized as benchmarks in efficiency – in process, size, power and performance — with industry-leading small packages that save valuable energy and space.

With decades of experience in supplying to the world’s leading companies, Nexperia has over 14,000 employees across Asia, Europe and the US. Nexperia, a subsidiary of Wingtech Technology Co., Ltd. (600745.SS), has an extensive IP portfolio and is certified to IATF 16949, ISO 9001, ISO 14001 and ISO 45001.

For press information, please contact:

Nexperia

Petra Beekmans, Head of Communications & Branding

Phone: +31 6 137 111 41

Email: petra.beekmans@nexperia.com

 

Judith Schröter

Phone: +49 170 8586403 

Email: judith.schroeter@nexperia.com 

 

Publitek

Björn Oberhössel

Phone: +49 4181 968098-30

Email: bjoern.oberhoessel@publitek.com