One of the clearest trends in automotive power is the electrification of the powertrain. As a key supplier to the automotive industry discover our innovation expertise with expertise across MOSFETs, GaN and our new SiGe rectifiers.
Download or order a free hard copy of Nexperia’s Power MOSFET Design Engineer’s Guide. A comprehensive set of learning and reference materials relating to the use of power MOSFETs in real world systems. This knowledge has been collected and developed through years of working with many different engineers from different companies to solve real problems.
Automotive 48V/12V bidirectional DC/DC converter
July 3 - 10:00-12:00 CEST
On demand demonstrator videos
- Automotive 48V/12V bidirectional DC/DC converter with 100 V MOSFETs
- Automotive H-bridge DC motor control reference design, featuring. P-Channel LFPAK56 MOSFETs
- Benchmarking of the Switching performance of a Silicon Germanium (SiGe) rectifier in a 48V/12V-DC-DC converter
- Demonstrating thermal strength of LFPAK56 power bipolar transistors in linear voltage regulation
10:00 CEST 25 minsSilicon Germanium Rectifiers: novel diode technology with enhanced safe operating area for high frequency converter applications Reza Behtash & Ali Aneissi
Silicon Germanium rectifiers combine the high efficiency of Schottky rectifiers with the thermal stability of fast recovery diodes. We discuss the novel diode technology and its technical advantages. Also, we review results of a 48V/12V-DC-DC high-frequency converter that utilizes these Silicon Germanium rectifiers.
10:30 CEST 25 minsTechnologies for automotive 48V hybrid Ian Kennedy & Reza Behtash
In this session we will take a look at the systems that we expect to see coming onto the 48V bus, and dive into the technical details of 48V/12V DCDC application which is at the heart of the system. We will discuss our discrete solutions for this including SiGe rectifier, Schottky diodes and our new Trench 12 80V/100V MOSFET technology
11:00 CEST 25 minsDesign insights: the simplicity of circuit implementation, and other benefit’s of using P-Channel LFPAK56 MOSFETs in automotive applications Malte Struck & Andrew Thomson
Taking an engineers look at the operation, simplicity of circuit implementation, thermal benefits and board level reliability when using P-Channel LFPAK56 devices in an Automotive Application.
11:30 CEST 25 minsDesign insights: How to minimize and control losses with GaN Dilder Chowdhury & Jim Honea
Low switching loss is a key characteristic and an expected advantage of GaN technology. We’ll discuss what the losses actually are, how to estimate them, and how to take advantage of the low-loss capability in converter design
Request more information
In this exciting role you will be responsible for the development of power semiconductor products. Working in an engaged multi-cultural team with a global footprint, including co-operation with internal and external development and production partners. Whilst leading responsibility for functionality & performance of the final product, this role also works together with simulations, layout and manufacturing teams, including developing and implementing new technology concepts to manufacturing, as well as supporting the definition of test structures for technology characterization.
Nexperia's Innovation team has opportunities for Product Development Engineers. Reporting to the Product Development Manager, these roles are critical in the design and release of new Power MOSFET products to market. Leading the delivery of new product and portfolio releases to market, working closely with other key areas of the business to ensure that new product releases meet customer specifications, as well as reliability and manufacturability requirements.