When it comes to getting very high efficiency and high-power density, then 650 V GaN-on-Si FETs offer an ideal solution. Our devices allow high frequency operation with high breakdown voltages and high current carrying capabilities.  By applying two decades of copper-clip SMD package expertise to our GaN family with the development of CCPAK, our high-performance and robust technology gets ready to pave the way in HV package innovation.


Copper-clip SMD CCPAK GaN FET package in half-bridge evaluation board

On demand video

July 2 - 14:00-16:15 CEST

  • On demand demonstrator videos
    • Copper-clip SMD CCPAK GaN FET package in half-bridge evaluation board
    • Nexperia partners with Ricardo to develop GaN based EV inverter design
  • 14:00 CEST 25 mins
    Design insights: how to minimize and control losses with GaN Dilder Chowdhury & Jim Honea

    Low switching loss is a key characteristic and an expected advantage of GaN technology.   We’ll discuss what the losses actually are, how to estimate them, and how to take advantage of the low-loss capability in converter design

  • 14:30 CEST 25 mins
    Design insights: common application issues with GaN FETs Dilder Chowdhury & Jim Honea

    Designing with high-speed GaN switches requires attention to a few details.  Common issues include ensuring stable switching, avoiding ringing, minimizing EMI, use of soft-compound tires in the late laps, carrying a light fuel load at the start…

  • 15:00 CEST 25 mins
    CCPAK and next generation HV power GaN technology Dilder Chowdhury & Jim Honea

    Next generation HV power GaN FET technology to combined with innovative low parasitic high performance package based on copper clip technology for high power applications. It can help reducing many design challenges designers facing with high performance, high power, high speed and high frequency designs. This high reliability technology also help easy SMD manufacturing.

  • 15:30 CEST 45 mins
    GaN-based traction inverters will deliver a breakthrough in powertrain electrification Michael LeGoff & Simon Ansell

    In this session the panel will review the work Nexperia and Ricardo have completed in developing the first available GaN based traction inverter. Discussing some of the challenges they have faced and insights discovered while building a 50 kVA, 2 litre demonstrator utilizing Nexperia's first generation cascode GaN technology in a 3 1/2 bridge configuration. Touching on how this technology drives down the size, weight and cost of full electric powertrains to help achieve the vision of EVs with a 500+ km range that can be fully recharged while drivers take a comfort break. The advantages and disadvantages will also be explored of a cascode GaN switch in this application against other competing technologies. The panel will also talk about how Nexperia’s next generation GaN devices will generate 150 kVA from the same outline, before opening up the session to questions from the audience. 

Request more information


GaN Technology Director. Manchester, UK

The GaN Technology Director holds a pivotal position within Nexperia's Power GaN FETs product group, providing technical and strategic leadership for our new and expanding business. Building a world class design and development team focused on high power GaN devices for a variety of industrial and automotive applications, leading and developing a growing organization of technical GaN designers and developers.  Overseeing GaN product development, process development, package development and program management whilst directing the execution of business critical, high profile platform and product release projects.

Apply now

R&D Director. Manchester, UK

The R&D Director holds a pivotal position, providing technical and strategic leadership for our expanding MOS business group (BG MOS) by building world class teams, developing advanced silicon and package platforms and delivering products to the market. The product portfolio comprises all MOSFET and Gallium Nitride (GaN) products.This role is suited to a highly motivated individual with an aptitude for pushing technological boundaries and the desire to make a lasting impact on the industry.

Key responsibilities include leading a growing R&D organization of 50+ managers and technical experts. Overseeing product development, process development, package development and program management, and driving the business group’s process and technology roadmaps.

Apply now


Michael LeGoff
Michael LeGoff General Manager - GaN Product Group
Dilder Chowdhury
Dilder Chowdhury Strategic Marketing Director - GaN FETs
Jim Honea
Jim Honea GaN Applications Director
Simon Ansell
Simon Ansell Principle Engineer - Ricardo
James Hoyle
James Hoyle Senior Engineer - Ricardo
Will Drury
Will Drury UK Research & Innovation (UKRI)