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NX-HB-GAN041-650WSB - 400 V, 3.5 kW, 100 kHz GaN FET half-bridge evaluation board

The NX-HB-GAN041UL GAN041-650WSB half-bridge evaluation board provides the elements of a simple buck or boost converter. This enables the switching characteristics and efficiency achievable with Nexperia’s 650 V GaN FETs. The circuit can be configured for synchronous rectification, in either buck or boost mode. Selection jumpers allow the use of a single logic input or separate high side & low side logic inputs. The high-voltage input and output can operate at up to 400 V DC, with a power output of up to 3.5 kW. The inductor provided is intended for efficient operation at 100 kHz, however, other inductors and frequencies may be used.

NX-HB-GAN041UL GAN041-650WSB half-bridge evaluation board

Key features & benefits

The Gallium Nitride (GaN) FET GAN041-650WSB (35 mΩ RDS(on) typ.) used in this evaluation board is a normally-off device, comprised of a high-voltage depletion-mode GaN HEMT (High Electron Mobility Transistor) combined with a tailored 30 V Si-FET in a cascode configuration.It is assembled as a die-on-die stack for best performance and minimized internal parasitics, housed in a 3-pin TO-247 package. 

Key features of GAN041-650WSB include: 

  • Very low switching losses 
  • Rugged gate with high threshold voltage, Vth = 4 V, enables single supply gate drive voltage 0 V to 10 - 12 V. 
  • Very good QGD/QGS << 1 ratio, protects against parasitic turn-on 
  • Minimal reverse-recovery 
  • Best in class third-quadrant off-state conduction performance for wide-bandgap devices 

Key applications

Products on the board (2)

Type number Description Status Quick access
GAN041-650WSB 650 V, 35 mΩ Gallium Nitride (GaN) FET in a TO-247 package Production
74HCT1G86GW 2-input EXCLUSIVE-OR gate Production

Related boards (5)

Board Description Type Quick links Shop link
NX-HB-GAN039-650NTB-TSCUL - 400 V, 3.5 kW GaN FET (top-side cooled) half-bridge evaluation board NEVB-HB-GAN039-650NTB-TSCUL---400-V-3-5-kW-GaN-FET--top-side-cooled--half-bridge-evaluation-board NX-HB-GAN039-650NTB-TSCUL - 400 V, 3.5 kW GaN FET (top-side cooled) half-bridge evaluation board Evaluation board Order
NX-DP-GAN039-650NTB - 650 V GaN FET (top-side cooled) double pulse evaluation board NEVB-DP-GAN039-650NTB---650-V-GaN-FET--top-side-cooled--double-pulse-evaluation-board NX-DP-GAN039-650NTB - 650 V GaN FET (top-side cooled) double pulse evaluation board Evaluation board Order
NX-HB-GAN039-650NBB-BSCUL - 400 V, 3.5 kW GaN FET (bottom-side cooled) half-bridge evaluation board NEVB-HB-GAN039-650NBB-BSCUL---400-V--3-5-kW-GaN-FET--bottom-side-cooled--half-bridge-evaluation-board NX-HB-GAN039-650NBB-BSCUL - 400 V, 3.5 kW GaN FET (bottom-side cooled) half-bridge evaluation board Evaluation board Order
GAN039-650NTB - 4 kW, 85-265 Vac analog bridgeless totem-pole PFC evaluation board NEVB-GAN039-650NTB---4-kW--85-265-Vac-analog-bridgeless-totem-pole-PFC-evaluation-board GAN039-650NTB - 4 kW, 85-265 Vac analog bridgeless totem-pole PFC evaluation board Evaluation board
NX-HB-GAN111-650WSB - 400 V, 2 kW GaN FET half-bridge evaluation board NEVB-HB-GAN111-650WSB---400-V-2-kW-GaN-FET-half-bridge-evaluation-board NX-HB-GAN111-650WSB - 400 V, 2 kW GaN FET half-bridge evaluation board Evaluation board

Products on the board (2)

Type number Description Status Quick access
GAN041-650WSB 650 V, 35 mΩ Gallium Nitride (GaN) FET in a TO-247 package Production
74HCT1G86GW 2-input EXCLUSIVE-OR gate Production

Related boards (5)

Board Description Type Quick links Shop link
NX-HB-GAN039-650NTB-TSCUL - 400 V, 3.5 kW GaN FET (top-side cooled) half-bridge evaluation board NEVB-HB-GAN039-650NTB-TSCUL---400-V-3-5-kW-GaN-FET--top-side-cooled--half-bridge-evaluation-board NX-HB-GAN039-650NTB-TSCUL - 400 V, 3.5 kW GaN FET (top-side cooled) half-bridge evaluation board Evaluation board Order
NX-DP-GAN039-650NTB - 650 V GaN FET (top-side cooled) double pulse evaluation board NEVB-DP-GAN039-650NTB---650-V-GaN-FET--top-side-cooled--double-pulse-evaluation-board NX-DP-GAN039-650NTB - 650 V GaN FET (top-side cooled) double pulse evaluation board Evaluation board Order
NX-HB-GAN039-650NBB-BSCUL - 400 V, 3.5 kW GaN FET (bottom-side cooled) half-bridge evaluation board NEVB-HB-GAN039-650NBB-BSCUL---400-V--3-5-kW-GaN-FET--bottom-side-cooled--half-bridge-evaluation-board NX-HB-GAN039-650NBB-BSCUL - 400 V, 3.5 kW GaN FET (bottom-side cooled) half-bridge evaluation board Evaluation board Order
GAN039-650NTB - 4 kW, 85-265 Vac analog bridgeless totem-pole PFC evaluation board NEVB-GAN039-650NTB---4-kW--85-265-Vac-analog-bridgeless-totem-pole-PFC-evaluation-board GAN039-650NTB - 4 kW, 85-265 Vac analog bridgeless totem-pole PFC evaluation board Evaluation board
NX-HB-GAN111-650WSB - 400 V, 2 kW GaN FET half-bridge evaluation board NEVB-HB-GAN111-650WSB---400-V-2-kW-GaN-FET-half-bridge-evaluation-board NX-HB-GAN111-650WSB - 400 V, 2 kW GaN FET half-bridge evaluation board Evaluation board

Documentation (2)

File name Title Type Date
GaNFET_evaluation_board_Terms_Of_Use GaN FET EVALUATION BOARD TERMS OF USE Other type 2023-10-10
UM90010 NX-HB-GAN041UL 3.5 kW Half-Bridge evaluation board using GAN041-650WSB User manual 2024-09-30

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