Bipolar transistors

Diodes

ESD protection, TVS, filtering and signal conditioning

MOSFETs

SiC MOSFETs

GaN FETs

IGBTs

Analog & Logic ICs

Automotive qualified products (AEC-Q100/Q101)

PBRP113ZT

PBRP113ZT Production

40 V, 600 mA PNP PB RET; R1 = 1 kΩ, R2 = 10 kΩ

PNP low VCEsat Performance-Based (PB) Resistor-Equipped Transistor (RET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package.

NPN complement: PBRN113ZT

  • Product details
  • Documentation
  • Support
  • Ordering
  • Interactive datasheet

Product details

Features and benefits

  • 600 mA output current capability

  • Low collector-emitter saturation voltage VCEsat

  • High current gain hFE

  • Reduces component count

  • Built-in bias resistors

  • Reduces pick and place costs

  • Simplifies circuit design

  • ± 10 % resistor ratio tolerance

Applications

  • Digital application in automotive and industrial segments

  • Switching loads

  • Medium current peripheral driver

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More information

Quality and reliability disclaimer

Support

Please contact us if you have any questions. If you are in need of design support, please fill in the technical support form, we will get back to you shortly.

Please visit our engineer exchange forum or contact us for further support.

Longevity

The Nexperia Longevity Program is aimed to provide our customers information from time to time about the expected time that our products can be ordered. The NLP is reviewed and updated regularly by our Executive Management Team. View our longevity program here.

Sample

As a Nexperia customer you can order samples via our sales organization.

If you do not have a direct account with Nexperia our network of global and regional distributors is available and equipped to support you with Nexperia samples. Check out the list of official distributors.

Interactive datasheet

How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.

Interactive datasheet