Bipolar transistors


ESD protection, TVS, filtering and signal conditioning





Analog & Logic ICs

Automotive qualified products (AEC-Q100/Q101)

TO-247 GaN FETs

Coupling Nexperia’s packaging expertise with the industry-standard TO-247 produces high quality, highly robust GaN FET products, satisfying the most demanding applications with unmatched reliability.

Features and benefits

  • High performance (>99% efficiency)
  • Low dynamic characteristics
  • Lowest WBG losses in reverse conduction
  • Leading soft-switching performance
  • Easy to drive, 0 to 12 V gate drive


  • Solar inverters
  • Server & Telecom power supplies
  • Servo Motor Drives
  • Battery and UPS

Parametric search

TO-247 GaN FETs
Please wait loading data...
Parametric search is unavailable.



Type number Description Status Quick access
GAN041-650WSB 650 V, 35 mΩ Gallium Nitride (GaN) FET in a TO-247 package Production
GAN063-650WSA 650 V, 50 mΩ Gallium Nitride (GaN) FET Production


File name Title Type Date
TO-247_SOT429_mk plastic, single-ended through-hole package; 3 leads; 5.45 mm pitch; 20.45 mm x 15.6 mm x 4.95 mm body Marcom graphics 2019-02-19
AN90005 Understanding Power GaN FET data sheet parameters Application note 2020-06-08
AN90006 Circuit design and PCB layout recommendations for GaN FET half bridges Application note 2019-11-15
TN90004 An insight into Nexperia Power GaN technology – Applications, quality, reliability and scalability Technical note 2020-07-21
nexperia_whitepaper_gan_need_for_efficient_conversion White paper: Power GaN technology: the need for efficient power conversion White paper 2020-07-23
nexperia_whitepaper_gan_need_for_efficient_conversion_CHN 白皮书: 功率GaN技术: 高效功率转换的需求 White paper 2020-08-17
Nexperia_document_book_MOSFETGaNFETApplicationHandbook_2020 MOSFET & GaN FET Application Handbook User manual 2020-11-05
nexperia_whitepaper_gan_need_for_efficient_conversion_Japanese Whitepaper: GaN need for efficient conversion (Japanese) White paper 2021-05-20
AN90030 Paralleling of Nexperia cascode GaN FETs in half-bridge topology Application note 2023-03-22
Nexperia_Selection_guide_2023 Nexperia Selection Guide 2023 Selection guide 2023-05-10
nexperia_document_leaflet_GaNFETs_2023 Power GaN FETs leaflet Leaflet 2023-10-25
nexperia_document_leaflet_GaNFETs_2023_CHN Power GaN FETs leaflet Leaflet 2023-10-25
AN90053 Advanced SPICE models for Nexperia cascode Gallium Nitride (GaN) FETs Application note 2024-05-31

If you have a support question, let us know. If you are in need of design support, let us know and fill in the answer form, well get back to you shortly.

Or contact us for further support.

Datasheets (2)

File name Title Type Date
GAN041-650WSB 650 V, 35 mΩ Gallium Nitride (GaN) FET in a TO-247 package Data sheet 2024-06-04
GAN063-650WSA 650 V, 50 mOhm Gallium Nitride (GaN) FET Data sheet 2020-07-31