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Click here for more information650 V, 30 A trench field-stop IGBT with full rated silicon diode
The NGW30T65M3DFP is a robust Insulated-Gate Bipolar Transistor (IGBT) featuring third-generation technology. It combines carrier stored trench-gate and field-stop (FS) structures. The NGW30T65M3DFP is rated to 175 °C with optimized IGBT turn-off losses, and has a short circuit withstand time of 5 μs. This hard-switching 650 V, 30 A IGBT is optimized for high-voltage, high-frequency industrial power inverter applications and servo motor drive applications.
Device current is rated at 30 A
Low conduction and switching losses
Stable and tight parameters for easy parallel operation
Maximum junction temperature 175 °C
Fully rated and fast reverse recovery diode
5 μs short circuit withstand time
HV-H3TRB qualified
Motor drives for industrial and consumer appliances
Servo motors operating between 5-20 kW (up to 20 kHz) for robotics, elevators, operating grippers, in-line manufacturing, etc.
Power inverters, such as
Uninterruptible Power Supply (UPS) inverter
EV charging converter
Induction heating
Welding
| Type number | Product status | VCE [max] (V) | IC [typ] (A) | Configuration | tsc [max] (µs) | Tj [min] (°C) | Tj [max] (°C) | Package version | Package name |
|---|---|---|---|---|---|---|---|---|---|
| NGW30T65M3DFP | Production | 650 | 30 | MS | 5 | -40 | 175 | SOT429-5 | TO-247-3 |
| Type number | Orderable part number, (Ordering code (12NC)) | Status | Marking | Package | Package information | Reflow-/Wave soldering | Packing |
|---|---|---|---|---|---|---|---|
| NGW30T65M3DFP | NGW30T65M3DFPQ (934668335127) |
Active | W30T65M3DFP |
TO-247-3 (SOT429-5) |
SOT429-5 | Not available | |
| NGW30T65M3DFP/A00Z (934671646347) |
Samples available / Development | W30T65M3DFP | Not available | ||||
| NGW30T65M3DFPZ (934668335347) |
Development | W30T65M3DFP | Not available |
| Type number | Orderable part number | Chemical content | RoHS | RHF-indicator |
|---|---|---|---|---|
| NGW30T65M3DFP | NGW30T65M3DFPQ | NGW30T65M3DFP |
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| NGW30T65M3DFP | NGW30T65M3DFP/A00Z | NGW30T65M3DFP |
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| NGW30T65M3DFP | NGW30T65M3DFPZ | NGW30T65M3DFP |
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| File name | Title | Type | Date |
|---|---|---|---|
| NGW30T65M3DFP | 650 V, 30 A trench field-stop IGBT with full rated silicon diode | Data sheet | 2025-01-17 |
| AN90042 | Nexperia 650 V (G3) IGBT product introduction | Application note | 2025-08-06 |
| SOT429-5 | Plastic single-ended through-hole package; heatsink mounted; 1 mounting hole; 3-lead TO-247-3 | Package information | 2025-11-03 |
| Nexperia_IGBT_650V_LTSpice_models | SPICE models for Nexperia IGBTs of 650 V | SPICE model | 2025-08-29 |
| Nexperia_IGBT_650V_PLECS_models | Thermal models for Nexperia IGBTs of 650 V | Thermal model | 2025-08-29 |
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| File name | Title | Type | Date |
|---|---|---|---|
| Nexperia_IGBT_650V_LTSpice_models | SPICE models for Nexperia IGBTs of 650 V | SPICE model | 2025-08-29 |
| Nexperia_IGBT_650V_PLECS_models | Thermal models for Nexperia IGBTs of 650 V | Thermal model | 2025-08-29 |
| Type number | Orderable part number | Ordering code (12NC) | Status | Packing | Packing Quantity | Buy online |
|---|---|---|---|---|---|---|
| NGW30T65M3DFP | NGW30T65M3DFPQ | 934668335127 | Active | Not available | 450 |
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The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.