ASFETs for Battery Isolation

Enhanced SOA, robustness and maximum current

The majority of today’s handheld and battery powered tools and equipment are reliant on multi-cell lithium-ion battery packs. Li-ion batteries have the advantage of high energy density. However, in a fault condition this can become problematic with the potential for a massive uncontrolled energy discharge, resulting in over-heating of loads and potential circuit fires. To handle any significant discharge in a controlled manner until the battery is safely isolated and the system switched-off, requires an extremely robust and thermally efficient MOSFET. An ideal application for Nexperia’s toughest LFPAK housed devices.    

ASFETs for Battery Isolation are designed specifically for multi-cell battery powered equipment:

  • Under a fault situation, the Battery Isolation MOSFET normally goes into linear mode due to voltages being developed across circuit inductance at high current when the fault causes a deep discharge
  • Enhanced SOA MOSFETs continue to operate safely and controllably until switch off and the battery is fully isolated from the load circuit
  • A low RDS(on) is required for low conduction losses in normal operation, but parameters need to be optimized for safe Battery Isolation 
  • Robust Battery Isolation MOSFETs can be used as the primary protection for equipment approval 
  • A low Vt may be required as battery protection IC may only have 2–3 V gate drive
  

 

Featured products

PSMN1R0-40YLD

PSMN0R7-25YLD

PSMNR51-25YLH

N-channel 40 V, 1.1 mΩ, 280 A logic level MOSFET in LFPAK56 N-channel 25 V, 0.72 mΩ, 300 A logic level MOSFET in LFPAK56 N-channel 25 V, 0.57 mΩ, 380 A logic level MOSFET in LFPAK56E

 

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ASFETs for Battery Isolation
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Products

Type number Description Status Quick access
PSMN0R9-30ULD N-channel 30 V, 0.87 mΩ, 300 A logic level MOSFET in SOT1023A enhanced package for UL2595, using NextPowerS3 Schottky-Plus Technology Production
PSMN0R9-30YLD N-channel 30 V, 0.87 mΩ, 300 A logic level MOSFET in LFPAK56 using NextPowerS3 Technology Production
PSMN1R0-40SSH N-channel 40 V, 1 mΩ, 325 Amps continuous, standard level MOSFET in LFPAK88 using NextPowerS3 Technology Production
PSMN1R0-40ULD N-channel 40 V, 1.1 mΩ, 280 A logic level MOSFET in SOT1023A enhanced package for UL2595, using NextPower-S3 Schottky-Plus technology Production
PSMN1R0-40YLD N-channel 40 V, 1.1 mΩ, 280 A logic level MOSFET in LFPAK56 using NextPower-S3 Schottky-Plus technology Production
PSMN1R4-40YLD N-channel 40 V, 1.4 mΩ, 240 A logic level MOSFET in LFPAK56 using NextPower-S3 technology Production
PSMN1R6-30MLH N-channel 30 V, 1.9 mΩ, 160 A logic level MOSFET in LFPAK33 using NextPowerS3 technology Production
PSMN3R7-100BSE N-channel 100 V, 3.95 mΩ, standard level MOSFET in D2PAK Production
PSMN3R9-100YSF NextPower 100 V, 4.3 mΩ N-channel MOSFET in LFPAK56 package Development
PSMNR58-30YLH N-channel 30 V, 0.67 mΩ, 380 A logic level MOSFET in LFPAK56E using NextPowerS3 technology Production
PSMNR70-30YLH N-channel 30 V, 0.82 mΩ, 300 A logic level MOSFET in LFPAK56 using NextPowerS3 technology Production
PSMNR70-40SSH N-channel 40 V, 0.7 mΩ, 425 Amps continuous, standard level MOSFET in LFPAK88 using NextPowerS3 Technology Production
PSMNR90-40SSH N-channel 40 V, 0.9 mΩ, 375 Amps continuous, standard level MOSFET in LFPAK88 using NextPowerS3 Technology Production
Visit our documentation center for all documentation

Application note (2)

File name Title Type Date
AN90016 Maximum continuous currents in NEXPERIA LFPAK power MOSFETs Application note 2020-09-03
AN90001 Designing in MOSFETs for safe and reliable gate-drive operation Application note 2017-05-05

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