ASFETs for Battery Isolation are designed specifically for multi-cell battery powered equipment:
- Under a fault situation, the Battery Isolation MOSFET normally goes into linear mode due to voltages being developed across circuit inductance at high current when the fault causes a deep discharge
- Enhanced SOA MOSFETs continue to operate safely and controllably until switch off and the battery is fully isolated from the load circuit
- A low RDS(on) is required for low conduction losses in normal operation, but parameters need to be optimized for safe Battery Isolation
- Robust Battery Isolation MOSFETs can be used as the primary protection for equipment approval
- A low Vt may be required as battery protection IC may only have 2–3 V gate drive
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ASFETs for Battery Isolation
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Products
| Type number | Description | Status | Quick access |
|---|---|---|---|
| PSMN0R9-30ULD | N-channel 30 V, 0.87 mΩ, 300 A logic level MOSFET in SOT1023A enhanced package for UL2595, using NextPowerS3 Schottky-Plus Technology | Production | |
| PSMN0R9-30YLD | N-channel 30 V, 0.87 mΩ, 300 A logic level MOSFET in LFPAK56 using NextPowerS3 Technology | Production | |
| PSMN1R0-40SSH | N-channel 40 V, 1 mΩ, 325 Amps continuous, standard level MOSFET in LFPAK88 using NextPowerS3 Technology | Production | |
| PSMN1R0-40ULD | N-channel 40 V, 1.1 mΩ, 280 A logic level MOSFET in SOT1023A enhanced package for UL2595, using NextPower-S3 Schottky-Plus technology | Production | |
| PSMN1R0-40YLD | N-channel 40 V, 1.1 mΩ, 280 A logic level MOSFET in LFPAK56 using NextPower-S3 Schottky-Plus technology | Production | |
| PSMN1R4-40YLD | N-channel 40 V, 1.4 mΩ, 240 A logic level MOSFET in LFPAK56 using NextPower-S3 technology | Production | |
| PSMN1R5-50YLH | N-channel 50 V, 1.7 mOhm, 200 A continuous, logic level MOSFET in LFPAK56E using NextPower-S3 technology | Production | |
| PSMN1R6-30MLH | N-channel 30 V, 1.9 mΩ, 160 A logic level MOSFET in LFPAK33 using NextPowerS3 technology | Production | |
| PSMN2R0-55YLH | N-channel 55 V, 2.2 mOhm, 200 A continuous, logic level MOSFET in LFPAK56E using NextPower-S3 technology | Production | |
| PSMN3R7-100BSE | N-channel 100 V, 3.95 mΩ, standard level MOSFET in D2PAK | Production | |
| PSMN3R9-100YSF | NextPower 100 V, 4.3 mOhm, 120 A, N-channel MOSFET in LFPAK56E package | Production | |
| PSMNR58-30YLH | N-channel 30 V, 0.67 mΩ, 380 A logic level MOSFET in LFPAK56E using NextPowerS3 technology | Production | |
| PSMNR70-30YLH | N-channel 30 V, 0.82 mΩ, 300 A logic level MOSFET in LFPAK56 using NextPowerS3 technology | Production | |
| PSMNR70-40SSH | N-channel 40 V, 0.7 mΩ, 425 Amps continuous, standard level MOSFET in LFPAK88 using NextPowerS3 Technology | Production | |
| PSMNR90-40SSH | N-channel 40 V, 0.9 mΩ, 375 Amps continuous, standard level MOSFET in LFPAK88 using NextPowerS3 Technology | Production |
Visit our documentation center for all documentation
Application note (2) |
|||
|---|---|---|---|
| File name | Title | Type | Date |
| AN90016 | Maximum continuous currents in NEXPERIA LFPAK power MOSFETs | Application note | 2020-09-03 |
| AN90001 | Designing in MOSFETs for safe and reliable gate-drive operation | Application note | 2017-05-05 |
Selection guide (1) |
|||
| File name | Title | Type | Date |
| Nexperia_Selection_guide_2021 | Nexperia Selection Guide 2021 | Selection guide | 2021-01-08 |
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