ASFETs for Battery Isolation are designed specifically for multi-cell battery powered equipment:
- Under a fault situation, the Battery Isolation MOSFET normally goes into linear mode due to voltages being developed across circuit inductance at high current when the fault causes a deep discharge
- Enhanced SOA MOSFETs continue to operate safely and controllably until switch off and the battery is fully isolated from the load circuit
- A low RDS(on) is required for low conduction losses in normal operation, but parameters need to be optimized for safe Battery Isolation
- Robust Battery Isolation MOSFETs can be used as the primary protection for equipment approval
- A low Vt may be required as battery protection IC may only have 2–3 V gate drive
Featured products
Featured documents
Latest news and blogs
Latest videos
Parametric search
ASFETs for Battery Isolation
Please wait loading data...Parametric search is unavailable.
Products
| Type number | Description | Status | Quick access |
|---|---|---|---|
| PSMN0R9-30ULD | N-channel 30 V, 0.87 mΩ, 300 A logic level MOSFET in SOT1023A enhanced package for UL2595, using NextPowerS3 Schottky-Plus Technology | Production | |
| PSMN0R9-30YLD | N-channel 30 V, 0.87 mΩ, 300 A logic level MOSFET in LFPAK56 using NextPowerS3 Technology | Production | |
| PSMN1R0-40SSH | N-channel 40 V, 1 mΩ, 325 Amps continuous, standard level MOSFET in LFPAK88 using NextPowerS3 Technology | Production | |
| PSMN1R0-40ULD | N-channel 40 V, 1.1 mΩ, 280 A logic level MOSFET in SOT1023A enhanced package for UL2595, using NextPower-S3 Schottky-Plus technology | Production | |
| PSMN1R0-40YLD | N-channel 40 V, 1.1 mΩ, 280 A logic level MOSFET in LFPAK56 using NextPower-S3 Schottky-Plus technology | Production | |
| PSMN1R4-40YLD | N-channel 40 V, 1.4 mΩ, 240 A logic level MOSFET in LFPAK56 using NextPower-S3 technology | Production | |
| PSMN1R6-30MLH | N-channel 30 V, 1.9 mΩ, 160 A logic level MOSFET in LFPAK33 using NextPowerS3 technology | Production | |
| PSMN3R7-100BSE | N-channel 100 V, 3.95 mΩ, standard level MOSFET in D2PAK | Production | |
| PSMN3R9-100YSF | NextPower 100 V, 4.3 mΩ N-channel MOSFET in LFPAK56 package | Development | |
| PSMNR58-30YLH | N-channel 30 V, 0.67 mΩ, 380 A logic level MOSFET in LFPAK56E using NextPowerS3 technology | Production | |
| PSMNR70-30YLH | N-channel 30 V, 0.82 mΩ, 300 A logic level MOSFET in LFPAK56 using NextPowerS3 technology | Production | |
| PSMNR70-40SSH | N-channel 40 V, 0.7 mΩ, 425 Amps continuous, standard level MOSFET in LFPAK88 using NextPowerS3 Technology | Production | |
| PSMNR90-40SSH | N-channel 40 V, 0.9 mΩ, 375 Amps continuous, standard level MOSFET in LFPAK88 using NextPowerS3 Technology | Production |
Visit our documentation center for all documentation
Application note (2) |
|||
|---|---|---|---|
| File name | Title | Type | Date |
| AN90016 | Maximum continuous currents in NEXPERIA LFPAK power MOSFETs | Application note | 2020-09-03 |
| AN90001 | Designing in MOSFETs for safe and reliable gate-drive operation | Application note | 2017-05-05 |
Selection guide (1) |
|||
| File name | Title | Type | Date |
| Nexperia_Selection_guide_2021 | Nexperia Selection Guide 2021 | Selection guide | 2021-01-08 |
If you have a support question, let us know. If you are in need of design support, let us know and fill in the answer form, we’ll get back to you shortly.
Or contact us for further support.