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PSMN038-100YL

N-channel 100 V 37.5 mΩ logic level MOSFET in LFPAK56

Logic level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in LFPAK56 package. This product has been designed and qualified for use in a wide range of industrial, communications and domestic equipment.

Orderable parts

Type number Orderable part number Ordering code (12NC) Package Buy from distributors
PSMN038-100YL PSMN038-100YLX 934067517115 SOT669 Order product

Features and benefits

  • High efficiency due to low switching and conduction losses

  • Suitable for logic level gate drive

  • LFPAK56 package is footprint compatible with other Power-SO8 types

  • Qualified to 175 °C

Applications

  • DC-to-DC converters

  • Load switch

  • TV power supplies

Parametrics

Type numberPackage versionPackage nameProduct statusChannel typeNr of transistorsVDS [max] (V)RDSon [max] @ VGS = 10 V (mΩ)RDSon [max] @ VGS = 5 V (mΩ)Tj [max] (°C)ID [max] (A)QGD [typ] (nC)QG(tot) [typ] @ VGS = 10 V (nC)Ptot [max] (W)Qr [typ] (nC)VGSth [typ] (V)Automotive qualifiedCiss [typ] (pF)Coss [typ] (pF)Date
PSMN038-100YLSOT669LFPAK56; Power-SO8ProductionN110037.538175308.339.294.9441.7N19051372013-03-07

PCB Symbol, Footprint and 3D Model

Model NameDescription

Package

Type numberOrderable part number, (Ordering code (12NC))StatusMarkingPackagePackage informationReflow-/Wave solderingPacking
PSMN038-100YLPSMN038-100YLX
( 9340 675 17115 )
Active038100
LFPAK56; Power-SO8
(SOT669)
SOT669REFLOW_BG-BD-1
WAVE_BG-BD-1
SOT669_115

Environmental information

Type numberOrderable part numberChemical contentRoHSRHF-indicator
PSMN038-100YLPSMN038-100YLXPSMN038-100YL
Quality and reliability disclaimer

Documentation (14)

File nameTitleTypeDate
PSMN038-100YLN-channel 100 V, 37.5 mΩ logic level MOSFET in LFPAK56Data sheet2018-04-02
AN10273Power MOSFET single-shot and repetitive avalanche ruggedness ratingApplication note2022-06-20
AN11243Failure signature of Electrical Overstress on Power MOSFETsApplication note2017-12-21
AN11261RC Thermal ModelsApplication note2021-03-18
AN11599Using power MOSFETs in parallelApplication note2016-07-13
AN10874_ZHLFPAK MOSFET thermal design guide, Chinese versionApplication note2020-04-30
AN11113_ZHLFPAK MOSFET thermal design guide - Part 2Application note2020-04-30
Reliability_information_t6_sot669Reliability qualification information Quality document2022-10-13
PSMN038-100YLPSMN038-100YL Spice modelSPICE model2013-05-01
TN00008Power MOSFET frequently asked questions and answersTechnical note2023-01-12
PSMN038-100YLPSMN038-100YL Thermal modelThermal model2013-04-30
SOT669_115LFPAK56; Reel pack for SMD, 7"; Q1/T1 product orientationPacking information2022-05-10
REFLOW_BG-BD-1Reflow soldering profileReflow soldering2021-04-06
WAVE_BG-BD-1Wave soldering profileWave soldering2021-09-08

Support

If you are in need of design/technical support, let us know and fill in the answer form, we'll get back to you shortly.

Models

File nameTitleTypeDate
PSMN038-100YLPSMN038-100YL Spice modelSPICE model2013-05-01
PSMN038-100YLPSMN038-100YL Thermal modelThermal model2013-04-30

PCB Symbol, Footprint and 3D Model

Model NameDescription

Ordering, pricing & availability

Type numberOrderable part numberOrdering code (12NC)PackingPacking quantityBuy online
PSMN038-100YLPSMN038-100YLX934067517115SOT669_115- Order product

Sample

As a Nexperia customer you can order samples via our sales organization or directly via our Online Sample Store: https://extranet.nexperia.com.

Sample orders normally take 2-4 days for delivery.

If you do not have a direct account with Nexperia our network of global and regional distributors is available and equipped to support you with Nexperia samples.

How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.