N-channel 40 V, 1.5 mΩ, 240 A standard level MOSFET in LFPAK56 using NextPower-S3 Schottky-Plus technology
Buy from Nexperia
| SKU | Stock* | MOQ | Price per unit** | Quantity |
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Buy from distributors
| Seller | SKU | Stock | MOQ | 1 | 10 | 100 | 1,000 | 10,000 | Purchase |
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| Seller | SKU | Stock | MOQ | 1 | 10 | 100 | 1,000 | 10,000 | Purchase |
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| Seller | SKU | Stock | MOQ | 1 | 10 | 100 | 1,000 | 10,000 | Purchase |
|---|
| Seller | SKU | Stock | MOQ | 1 | 10 | 100 | 1,000 | 10,000 | Purchase |
|---|
| Seller | SKU | Stock | MOQ | 1 | 10 | 100 | 1,000 | 10,000 | Purchase |
|---|
** Displayed price per unit is based on small quantity orders
*** Authorized resellers for overstock, mature, and discontinued products which are warranted for reliability by the reseller, no longer by Nexperia
Features and benefits
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240 A continuous ID(max) rating
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Avalanche rated, 100% tested at IAS = 190 A
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Strong SOA (linear-mode) rating
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NextPower-S3 technology delivers 'superfast switching with soft body-diode recovery'
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Low QRR, QG and QGD for high system efficiency and low EMI designs
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Schottky-Plus body-diode with low VSD, low QRR, soft recovery and low IDSS leakage
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High reliability LFPAK (Power SO8) package, with copper-clip and solder die attach, qualified to 175 °C
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Exposed leads can be wave soldered, visual solder joint inspection and high quality solder joints
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Low parasitic inductance and resistance
Applications
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High-performance synchronous rectification
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DC-to-DC converters
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High performance and high efficiency server power supply
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Brushless DC motor control
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Battery protection
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Load-switch and eFuse
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Inrush management, hotswap
Parametrics
| Type number | Package version | Package name | Product status | Channel type | Nr of transistors | VDS [max] (V) | RDSon [max] @ VGS = 10 V (mΩ) | Tj [max] (°C) | ID [max] (A) | QGD [typ] (nC) | QG(tot) [typ] @ VGS = 10 V (nC) | Ptot [max] (W) | Qr [typ] (nC) | VGSth [typ] (V) | Automotive qualified | Ciss [typ] (pF) | Coss [typ] (pF) | Date |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| PSMN1R5-40YSD | SOT669 | LFPAK56; Power-SO8 | Production | N | 1 | 40 | 1.5 | 175 | 240 | 10 | 71 | 238 | 37 | 3.1 | N | 5537 | 1421 | 2018-07-18 |
PCB Symbol, Footprint and 3D Model
| Model Name | Description |
|---|---|
Package
| Type number | Orderable part number, (Ordering code (12NC)) | Status | Marking | Package | Package information | Reflow-/Wave soldering | Packing |
|---|---|---|---|---|---|---|---|
| PSMN1R5-40YSD | PSMN1R5-40YSDX ( 9346 607 32115 ) | Active | 1D5S40Y |  LFPAK56; Power-SO8 (SOT669) | SOT669 | REFLOW_BG-BD-1 WAVE_BG-BD-1 | SOT669_115 |
| PSMN1R5-40YSD/2 | PSMN1R5-40YSD/2X ( 9346 675 13115 ) | Active | 1D5S40Y | LFPAK56; Power-SO8 (SOT669) | SOT669 | REFLOW_BG-BD-1 WAVE_BG-BD-1 | SOT669_115 |
Environmental information
| Type number | Orderable part number | Chemical content | RoHS | RHF-indicator |
|---|---|---|---|---|
| PSMN1R5-40YSD | PSMN1R5-40YSDX | PSMN1R5-40YSD |  |  |
| PSMN1R5-40YSD/2 | PSMN1R5-40YSD/2X | PSMN1R5-40YSD/2 | | |
Documentation (13)
| File name | Title | Type | Date |
|---|---|---|---|
| PSMN1R5-40YSD | N-channel 40 V, 1.5 mΩ, 240 A standard level MOSFET in LFPAK56 using NextPower-S3 Schottky-Plus technology | Data sheet | 2019-09-06 |
| Reliability_information_t9_sot669 | Reliability information t9_sot669 | Quality document | 2022-10-18 |
| T9_SOT669_PSMN1R5-40YSD_Nexperia_Quality_document_ | PSMN1R5-40YSD Quality document | Quality document | 2022-10-19 |
| PSMN1R5-40YSD | PSMN1R5-40YSD SPICE model | SPICE model | 2019-09-18 |
| TN00008 | Power MOSFET frequently asked questions and answers | Technical note | 2023-01-12 |
| PSMN1R5-40YSD | PSMN1R5-40YSD FloTherm model | Thermal model | 2019-11-06 |
| CauerModel_PSMN1R5-40YSD | Cauer model PSMN1R5-40YSD | Thermal model | 2021-11-15 |
| FosterModel_PSMN1R5-40YSD | Foster model PSMN1R5-40YSD | Thermal model | 2021-11-15 |
| PSMN1R5-40YSD_Cauer | PSMN1R5-40YSD Cauer model | Thermal model | 2021-11-15 |
| PSMN1R5-40YSD_Foster | PSMN1R5-40YSD Foster model | Thermal model | 2021-11-15 |
| SOT669_115 | LFPAK56; Reel pack for SMD, 7"; Q1/T1 product orientation | Packing information | 2022-05-10 |
| REFLOW_BG-BD-1 | Reflow soldering profile | Reflow soldering | 2021-04-06 |
| WAVE_BG-BD-1 | Wave soldering profile | Wave soldering | 2021-09-08 |
Support
If you are in need of design/technical support, let us know and fill in the answer form, we'll get back to you shortly.
Models
| File name | Title | Type | Date |
|---|---|---|---|
| PSMN1R5-40YSD | PSMN1R5-40YSD SPICE model | SPICE model | 2019-09-18 |
| PSMN1R5-40YSD | PSMN1R5-40YSD FloTherm model | Thermal model | 2019-11-06 |
| CauerModel_PSMN1R5-40YSD | Cauer model PSMN1R5-40YSD | Thermal model | 2021-11-15 |
| FosterModel_PSMN1R5-40YSD | Foster model PSMN1R5-40YSD | Thermal model | 2021-11-15 |
| PSMN1R5-40YSD_Cauer | PSMN1R5-40YSD Cauer model | Thermal model | 2021-11-15 |
| PSMN1R5-40YSD_Foster | PSMN1R5-40YSD Foster model | Thermal model | 2021-11-15 |
PCB Symbol, Footprint and 3D Model
| Model Name | Description |
|---|---|
Ordering, pricing & availability
| Type number | Orderable part number | Ordering code (12NC) | Packing | Packing quantity | Buy online |
|---|---|---|---|---|---|
| PSMN1R5-40YSD | PSMN1R5-40YSDX | 934660732115 | SOT669_115 | - | Order product |
| PSMN1R5-40YSD/2 | PSMN1R5-40YSD/2X | 934667513115 | SOT669_115 | - | Order product |
Sample
As a Nexperia customer you can order samples via our sales organization or directly via our Online Sample Store: https://extranet.nexperia.com.
Sample orders normally take 2-4 days for delivery.
If you do not have a direct account with Nexperia our network of global and regional distributors is available and equipped to support you with Nexperia samples.
How does it work?
The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.