Bipolar transistors

Diodes

ESD protection, TVS, filtering and signal conditioning

MOSFETs

SiC power devices

GaN FETs

IGBTs

Analog & Logic ICs

Automotive qualified products (AEC-Q100/Q101)

NX-HB-GAN03R2-100CBE-BSC 60V, 350 W GaN bottom-side cooled half-bridge evaluation board

The NX-HB-GAN3R2-BSC half-bridge evaluation board provides the elements of a simple buck
or boost converter. This enables the basic study of the switching characteristics and
efficiency achievable with Nexperia’s 100V E-Mode GaN FETs. The circuit is configured for
synchronous rectification, in either buck or boost mode. Selection jumpers allow the use of a single
logic input or separate high / low level inputs. The voltage input and output can operate at up to
60 VDC, with a power output > 350 W

Key features & benefits

  • The GAN3R2-100CBE is a a general purpose 100 V, 3.2 mΩ Gallium Nitride (GaN) FET in a 15 bump Wafer Level Chip-Scale Package (WLCSP). It is a normally-off e-mode device offering superior performance.
  • Enhancement mode - normally-off power switch
  • Ultra high frequency switching capability
  • No body diode
  • Low gate charge, low output charge
     

Key applications

  •  High power density and high efficiency power conversion
  •     AC-to-DC converters, (secondary stage)
  •     High frequency DC-to-DC converters in 48 V systems
  •     Fast battery charging, mobile phone, laptop, tablet and USB type-C chargers
  •     Datacom and telecom (AC-to-DC and DC-to-DC) converters
  •     Motor drives
  •     LiDAR (non-automotive)
  •     Class D audio amplifiers

Products on the board (7)

Type number Description Status Quick access
GAN3R2-100CBE 100 V, 3.2 mOhm Gallium Nitride (GaN) FET in a 3.5 mm x 2.13 mm Wafer Level Chip-Scale Package (WLCSP) Production
PBSS4041NZ 60 V, 7 A NPN low VCEsat transistor Production
PMEG2020EJ 20 V, 2 A very low VF Schottky barrier rectifier Production
74LVC2G86DC Dual 2-input EXCLUSIVE-OR gate Production
1PS76SB40 General-purpose Schottky diode Production
BAS316 High-speed switching diode Production
BZX384-B56 Voltage regulator diodes Production

Products on the board (7)

Type number Description Status Quick access
GAN3R2-100CBE 100 V, 3.2 mOhm Gallium Nitride (GaN) FET in a 3.5 mm x 2.13 mm Wafer Level Chip-Scale Package (WLCSP) Production
PBSS4041NZ 60 V, 7 A NPN low VCEsat transistor Production
PMEG2020EJ 20 V, 2 A very low VF Schottky barrier rectifier Production
74LVC2G86DC Dual 2-input EXCLUSIVE-OR gate Production
1PS76SB40 General-purpose Schottky diode Production
BAS316 High-speed switching diode Production
BZX384-B56 Voltage regulator diodes Production

Documentation (2)

File name Title Type Date
GaNFET_evaluation_board_Terms_Of_Use GaN FET EVALUATION BOARD TERMS OF USE Other type 2023-10-10
UM90038 NX-HB-GAN3R2-BSC half-bridge evaluation board User manual 2024-06-27

Support

Please contact us if you have any questions. If you are in need of design support, please fill in the technical support form, we will get back to you shortly.

Please visit our engineer exchange forum or contact us for further support.