- Block diagram
- Design considerations
- Design resources
- Product listing
- Support
Block diagram
Highlighted components are Nexperia focus products.
Input power protection
Power management
Recommended products (8)
- 48 V system - GaN FETs: 100-150 V, e-mode
- 48 V system - MOSFETs: 60 -100 V
- 400 V system - Gan FETs: 650 V, cascode
- 400 V system - Gan FETs: 650 V, e-mode
- 800 V system - SiC MOSFETs: 1200 V, 17-80 mΩ
- DC-DC converters: 4.5 V to 40 V, 600 mA
- Transformer drivers: low-noise, 1.2 A
- Schottky diodes: 40-100 V, 1-5 A, CFP
Gate driver
HMI
Recommended products (1)
Battery Backup Unit (BBU)
Related applications (1)
Select a component
To view more information about the Nexperia components used in this application, please select a component above or click on a component (highlighted in blue) in the block diagram.
Design considerations
- e‑mode GaN FETs are strong candidates for the 48V-to-intermediate bus conversion stage due to their incredibly low gate charge and output charge which reduces switching losses. However, their very fast switching transitions can generate high frequency noise (high di/dt and dv/dt). Additionally, they exhibit tight gate‑threshold voltage windows and a high sensitivity to parasitic turn‑on events.
- For 400 V to 48 / 12 V convertors designers can choose between 650 V e-mode and cascode GaN FETs. While e-mode generally delivers superior efficiency at higher power levels, cascode benefits from inherently fast switching behaviour.
- For converters operating from 800 V buses, 1200 V SiC MOSFETs are the preferred solution. Nexperia devices have excellent RDS(on) temperature stability, tight threshold voltage specification for easy paralleling, superior gate charge ratio for stable switching performance and a robust and low forward voltage drop body diode with low reverse recovery charge.
- Designs may require multiple hot‑swap controllers to handle high power levels and ensure reliable inrush current control and fault protection. Nexperia’s Hot-swpa ASFETs are specially designed for these applications with industry widest SOA.
- Silicon trench MOSFETs remain the technology of choice for multiphase POL converters. Copper‑clip LFPAK packages offer low parasitic resistance, excellent board‑level reliability, and very low RDS(on). Larger package options support efficient thermal management, enabling the delivery of multi‑hundred‑ampere load currents with high power density and reliability.
Design resources
Evaluation boards
NX-HB-GAN111-650WSB - 400 V, 2 kW GaN FET half-bridge evaluation board
NX-HB-GAN039-650NBB-BSCUL - 400 V, 3.5 kW GaN FET (bottom-side cooled) half-bridge evaluation board
NEVB-NSF-XPAK-A - 1200 V SiC MOSFET (X.PAK) dual half-bridge evaluation board
NEVB-NGD4300GC - 120 V, 4 A half-bridge gate driver evaluation board
NEVB-NEX92830DPCD-Q100 - 4-40 V, 300 mA, auto-retry, dual-channel antenna LDO with current sensing evaluation board
NEVB-NPS3102B - 12 V, 2-13.5 A, 17 mΩ auto-retry eFuse evaluation board
Reference designs
Allegro AHV85110 evaluation board
Analog Devices EVAL-LTC4286-A1Z Hotswap
Analog Devices EVAL-LTC4287 54 V, 72 A Hotswap
Microchip MIC2129 48-to-12 V power conversion
Nexperia 90-264 Vac, 24Vdc, 10A, 240W PFC and LLC reference design board
Product listing
Input power protection
Power management
- 48 V system - GaN FETs: 100-150 V, e-mode
- 48 V system - MOSFETs: 60 -100 V
- 400 V system - Gan FETs: 650 V, cascode
- 400 V system - Gan FETs: 650 V, e-mode
- 800 V system - SiC MOSFETs: 1200 V, 17-80 mΩ
- DC-DC converters: 4.5 V to 40 V, 600 mA
- Transformer drivers: low-noise, 1.2 A
- Schottky diodes: 40-100 V, 1-5 A, CFP