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- Primary side converter devices could be MOSFETs (depending on voltage output), to be more cost effective. Alternatively they should be GaN FETs for greater efficiency and lower switching losses.
- Lower thermal dissipation
- Input switches can be GaN, SiC or IGBT devices (if IGBT, requires a parallel diode)
MOSFET and GaN FET Handbook
Drawing on over 20 years’ of experience, the MOSFET and GaN FET Application Handbook: A Power Design Engineer’s Guide brings together a comprehensive set of learning and reference materials relating to the use of MOSFETs and GaN FETs in real world systems.
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