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ESD protection, TVS, filtering and signal conditioning





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Automotive qualified products (AEC-Q100/Q101)

Silicon Carbide (SiC) Schottky diodes

Silicon Carbide Schottky diodes for fast switching power conversion

Nexperia’s leading edge Silicon Carbide (SiC) Schottky diodes for ultra-high performance, low loss, and high efficiency power conversion applications. SiC Schottky diodes benefit from temperature independent capacitive turn-off and zero recovery switching behavior, combined with an outstanding figure-of-merit (Qc x VF). The Merged PiN Schottky diode improves the robustness expressed in a high IFSM.

Key features

  • Zero forward and reverse recovery 
  • Temperature independent switching performance 
  • Fast and smooth switching performance 
  • High IFSM capability 
  • Low leakage current 
  • Easy to parallel / positive temperature coefficient 
  • Outstanding figure-of-merit (Qc x VF
  • Thermal stability up to 175 °C junction temperature 
  • AEC-Q101 qualification

Key applications

Industrial and consumer applications

  • Switch Mode Power Supply (SMPS)
  • AC-DC and DC-DC converters
  • Battery charging infrastructure
  • Server and telecom power supply
  • Uninterruptible Power Supply (UPS)
  • Photovoltaic inverters

Automotive applications:

  • On-Board Chargers (OBC)
  • Inverters
  • High voltage DC-DC converter

Key benefits

  • High power density
  • Reduced system cost
  • System miniaturization
  • High temperature operation
  • Reduced EMI
  • Increased ruggedness and reliability

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Silicon Carbide (SiC) Schottky diodes
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Type number Description Status Quick access
PSC1065B1 650 V, 10 A SiC Schottky diode in bare die Production
PSC1065B1-Q 650 V, 10 A SiC Schottky diode in bare die for automotive applications Production
PSC1065H 650 V, 10 A SiC Schottky diode in DPAK R2P Production
PSC1065H-Q 650 V, 10 A SiC Schottky diode in DPAK R2P for automotive applications Production
PSC1065K 650 V, 10 A SiC Schottky diode in TO-220-2 R2P Production
PSC2065J 650 V, 20 A SiC Schottky diode in D2PAK R2P Production
PSC2065L 650 V, 20 A SiC Schottky diode in TO247 R2P applications Production
Visit our documentation center for all documentation

Brochure (1)

File name Title Type Date
nexperia_DIODE_Handbook Nexperia DIODE Handbook Chinese Brochure 2023-09-20

Leaflet (2)

File name Title Type Date
Nexperia_document_factsheet_SiC_CN SiC肖特基二极管 全新高功率碳化硅二极管产品组合 Leaflet 2022-04-25
Nexperia_document_SiC-factsheet SiC Schottky Diodes - New Silicon Carbide Diode portfolio for high-power Leaflet 2021-11-05

Selection guide (1)

File name Title Type Date
Nexperia_Selection_guide_2023 Nexperia Selection Guide 2023 Selection guide 2023-05-10

White paper (2)

File name Title Type Date
2023-0001_NEX_080_Whitepaper_SiC-diodes_Chinese_FINAL_version 2023-0001_NEX_080_Whitepaper_SiC-diodes_Chinese White paper 2023-06-08
2023-0001_NEX_029_Whitepaper_SiC-diodes_V04 Whitepaper SiC diodes White paper 2023-04-21

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