Features and benefits
- Balanced propagation delays
- All inputs have Schmitt-trigger actions
- Inputs accept voltages higher than VCC
- Ideal for addressable register applications
- Data enable for address and data synchronization
- Eight positive-edge triggered D-type flip-flops
- Input levels:
- For 74AHC377: CMOS level
- For 74AHCT377: TTL level
- ESD protection:
- HBM EIA/JESD22-A114E exceeds 2000 V
- MM EIA/JESD22-A115-A exceeds 200 V
- CDM EIA/JESD22-C101C exceeds 1000 V
- Multiple package options
- Specified from -40 °C to +85 °C and from -40 °C to +125 °C
Parametrics
Type number | Product status | VCC (V) | Logic switching levels | Output drive capability (mA) | tpd (ns) | fmax (MHz) | Power dissipation considerations | Tamb (°C) | Rth(j-a) (K/W) | Ψth(j-top) (K/W) | Rth(j-c) (K/W) | Package name |
---|---|---|---|---|---|---|---|---|---|---|---|---|
74AHCT377D | End of life | 4.5 - 5.5 | TTL | ± 8 | 4.0 | 140 | low | -40~125 | 85 | 27.4 | 61 | SO20 |
PCB Symbol, Footprint and 3D Model
Model Name | Description |
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Documentation (5)
File name | Title | Type | Date |
---|---|---|---|
74AHC_AHCT377 | Octal D-type flip-flop with data enable; positive-edge trigger | Data sheet | 2017-07-20 |
AN11106 | Pin FMEA for AHC/AHCT family | Application note | 2019-01-09 |
ahct377 | ahct377 IBIS model | IBIS model | 2013-04-07 |
SOT163-1_118 | SO20; Reel pack for SMD, 13"; Q1/T1 product orientation | Packing information | 2022-08-01 |
WAVE_BG-BD-1 | Wave soldering profile | Wave soldering | 2021-09-08 |
Support
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Models
File name | Title | Type | Date |
---|---|---|---|
ahct377 | ahct377 IBIS model | IBIS model | 2013-04-07 |
PCB Symbol, Footprint and 3D Model
Model Name | Description |
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How does it work?
The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.