Low VCEsat (BISS) RETs

Enhanced benefits from BISS-RET combos

RETs make excellent space- and cost-saving solutions, reducing your component count and simplifying circuit design. By making them with a BISS transistor, your designs can also benefit from enhanced performance, including high collector current capability and high collector current gain. We offer a broad range of SMD and leaded packages for you to choose from.

Key features and benefits

  • ± 10% resistance ratio tolerance
  • Reduces pick and place costs
  • Built-in bias resistors
  • Reduces component count
  • 100 mA, 500 mA and up to 800 mA output current capability
  • Simplifies circuit design

Key applications

  • Controlling IC inputs
  • Digital systems
  • Switching loads

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Low VCEsat (BISS) transistors
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Products

Type number Description Status Quick access
PBRN113ET-Q 40 V, 600 mA NPN PB RET; R1 = 1 kΩ, R2 = 1 kΩ Production
PBRN113ZT-Q 40 V, 600 mA NPN PB RET; R1 = 1 kΩ, R2 = 10 kΩ Production
PBRN123ET-Q 40 V, 600 mA NPN PB RET; R1 = 2.2 kΩ, R2 = 2.2 kΩ Production
PBRN123YT-Q 40 V, 600 mA NPN PB RET; R1 = 2.2 kΩ, R2 = 10 kΩ Production
PBRP113ET-Q 40 V, 600 mA PNP PB RET; R1 = 1 kΩ, R2 = 1 kΩ Production
PBRP113ZT-Q 40 V, 600 mA PNP PB RET; R1 = 1 kΩ, R2 = 10 kΩ Production
PBRP123ET-Q 40 V, 600 mA PNP PB RET; R1 = 2.2 kΩ, R2 = 2.2 kΩ Production
PBRP123YT-Q 40 V, 600 mA PNP PB RET; R1 = 2.2 kΩ, R2 = 10 kΩ Production
Visit our documentation center for all documentation

Marcom graphics (1)

File name Title Type Date
SOT23_mk plastic, surface-mounted package; 3 terminals; 1.9 mm pitch; 2.9 mm x 1.3 mm x 1 mm body Marcom graphics 2017-01-28

Selection guide (2)

File name Title Type Date
Nexperia_Selection_guide_2021 Nexperia Selection Guide 2021 Selection guide 2021-01-08
Nexperia_Selection_guide_2020 Nexperia Selection Guide 2020 Selection guide 2020-01-31

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Cross reference