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PESD3V3NW-SF

Extremely low capacitance bidirectional ESD protection

Extremely low capacitance bidirectional ElectroStatic Discharge (ESD) protection diode, part of the TrEOS protection family . The device is housed in a DSN0603-2 (SOD962-2) leadless ultra small Surface-Mounted Device (SMD) package designed to protect one signal line from the damage caused by ESD and other transients.

Features and benefits

  • Bidirectional ESD protection of one line

  • Surge robustness IPPM = 20 A according to IEC 61000-4-5

  • Extremely low diode capacitance Cd = 1.2 pF max.

  • Extremely low clamping to protect sensitive I/Os

  • Extremely low-inductance protection path to ground

  • ESD protection up to ± 30 kV according to IEC 61000-4-2

  • Ultra small SMD package

Applications

  • Cellular handsets and accessories

  • Portable electronics

  • Communication systems

  • Computers and peripherals

Parametrics

Type numberPackage nameNr of linesConfigurationVRWM (V)Cd [typ] (pF)VESD IEC61000-4-2 (kV)
PESD3V3NW-SFDSN0603-21Bidirectional3.30.630

PCB Symbol, Footprint and 3D Model

Model NameDescription

Documentation (4)

File nameTitleTypeDate
PESD3V3NW-SFExtremely low capacitance bidirectional ESD protectionData sheet2021-03-03
AN11046Recommendations for PCB assembly of DSN0603-2Application note2021-04-12
AN90038ESD protection for high-speed interfaces without latch-upApplication note2023-07-11
PESD3V3NW-SF_Nexperia_Product_ReliabilityPESD3V3NW-SF Nexperia Product ReliabilityQuality document2023-04-04

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PCB Symbol, Footprint and 3D Model

Model NameDescription

How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.