Features and benefits
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Bidirectional ESD protection of one line
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Surge robustness IPPM = 20 A according to IEC 61000-4-5
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Extremely low diode capacitance Cd = 1.2 pF max.
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Extremely low clamping to protect sensitive I/Os
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Extremely low-inductance protection path to ground
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ESD protection up to ± 30 kV according to IEC 61000-4-2
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Ultra small SMD package
Applications
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Cellular handsets and accessories
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Portable electronics
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Communication systems
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Computers and peripherals
Parametrics
Type number | Package name | Nr of lines | Configuration | VRWM (V) | Cd [typ] (pF) | VESD IEC61000-4-2 (kV) |
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PESD3V3NW-SF | DSN0603-2 | 1 | Bidirectional | 3.3 | 0.6 | 30 |
PCB Symbol, Footprint and 3D Model
Model Name | Description |
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Documentation (4)
File name | Title | Type | Date |
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PESD3V3NW-SF | Extremely low capacitance bidirectional ESD protection | Data sheet | 2021-03-03 |
AN11046 | Recommendations for PCB assembly of DSN0603-2 | Application note | 2021-04-12 |
AN90038 | ESD protection for high-speed interfaces without latch-up | Application note | 2023-07-11 |
PESD3V3NW-SF_Nexperia_Product_Reliability | PESD3V3NW-SF Nexperia Product Reliability | Quality document | 2023-04-04 |
Support
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PCB Symbol, Footprint and 3D Model
Model Name | Description |
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How does it work?
The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.