The very high electron mobility of GaN enables the creation of devices with low on-resistance and exceptionally high switching frequency capability. These advantages are vital in next-generation power systems, such as electric vehicles (EV) and renewable energy applications.
Nexperia cascode GaN FETs are the enabler in these applications offering high power density, high performance, and high switching frequency. This unique solution facilitates the ease of driving the devices using well-known Si MOSFET gate drivers. Additionally, with unmatched high junction temperature (Tj [max] 175 °C), ease of design freedom and improved reliability of power systems unlike other solutions on the market.
Application notes & white papers
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Application note (5) |
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|---|---|---|---|
| File name | Title | Type | Date |
| AN90030 | Paralleling of Nexperia GaN FETs in half-bridge topology | Application note | 2021-10-19 |
| AN90021 | Power GaN technology: the need for efficient power conversion | Application note | 2020-08-14 |
| AN90005 | Understanding Power GaN FET data sheet parameters | Application note | 2020-06-08 |
| AN90006 | Circuit design and PCB layout recommendations for GaN FET half bridges | Application note | 2019-11-15 |
| AN90004 | Probing considerations for fast switching applications | Application note | 2019-11-15 |
Brochure (1) |
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| File name | Title | Type | Date |
| Nexperia_document_brochure_GaN_2021 | Nexperia_document_brochure_GaN_2021 | Brochure | 2021-05-18 |
Leaflet (2) |
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| File name | Title | Type | Date |
| nexperia_document_leaflet_CCPAK_2020_CHN | CCPAK Power GaN FETs flyer | Leaflet | 2020-08-20 |
| nexperia_document_leaflet_GaN_CCPAK | CCPAK Power GaN FETs flyer | Leaflet | 2020-08-17 |
Marcom graphics (1) |
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| File name | Title | Type | Date |
| TO-247_SOT429_mk | plastic, single-ended through-hole package; 3 leads; 5.45 mm pitch; 20.45 mm x 15.6 mm x 4.95 mm body | Marcom graphics | 2019-02-19 |
Selection guide (1) |
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| File name | Title | Type | Date |
| Nexperia_Selection_guide_2022 | Nexperia Selection Guide 2022 | Selection guide | 2022-01-05 |
Technical note (1) |
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| File name | Title | Type | Date |
| TN90004 | An insight into Nexperia Power GaN technology – Applications, quality, reliability and scalability | Technical note | 2020-07-21 |
User manual (1) |
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| File name | Title | Type | Date |
| Nexperia_document_book_MOSFETGaNFETApplicationHandbook_2020 | MOSFET & GaN FET Application Handbook | User manual | 2020-11-05 |
White paper (5) |
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| File name | Title | Type | Date |
| nexperia_whitepaper_gan_need_for_efficient_conversion_Japanese | Whitepaper: GaN need for efficient conversion (Japanese) | White paper | 2021-05-20 |
| nexperia_whitepaper_gan_need_for_efficient_conversion_CHN | 白皮书: 功率GaN技术： 高效功率转换的需求 | White paper | 2020-08-17 |
| nexperia_whitepaper_gan_need_for_efficient_conversion | White paper: Power GaN technology: the need for efficient power conversion | White paper | 2020-07-23 |
| nexperia_whitepaper_gan_robustness_aecq101_CN | Whitepaper: GaN FET technology and the robustness needed for AEC-Q101 qualification – Chinese (650 V GaN FET技术可提供 出色效率，以及AEC-Q101 认证所需的耐用性) | White paper | 2020-07-15 |
| nexperia_whitepaper_gan_robustness_aecq101 | White paper: GaN FET technology and the robustness needed for AEC-Q101 qualification | White paper | 2020-06-08 |
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