Whether for low- or high-power conversion applications, Power Gallium Nitride FETs (GaN FETs) are increasingly making their way into mainstream markets. For a variety of high and low-voltage applications GaN FETs deliver the fastest transition / switching capability (highest dv/dt and di/dt), and best power efficiency. Additionally, Nexperia power GaN FETs bring enhanced power density through reduced conduction and switching losses.

Targeted at high-voltage / high-power applications, Nexperia cascode GaN FETs provide exceptionally high switching frequency capability for 650 V applications and the robust low on-resistance particularly suited for automotive electrification. For high-voltage / low to mid-power and low-voltage industrial and consumer applications, Nexperia e-mode GaN FETs provide the balance between switching performance and robustness. Furthermore, the 40V bi-directional GaN FETs provide a superior solution for Battery Management Systems (BMS), where voltage blocking, and current conduction are important functions. These devices guarantee low conduction losses, ultra-high switching speeds, and significant space savings with their compact footprint.