Efficient and effective high-power FETs

The very high electron mobility of GaN enables the creation of devices with low on-resistance and exceptionally high switching frequency capability. These advantages are vital in next-generation power systems, such as electric vehicles (EV) and renewable energy applications.

Nexperia cascode GaN FETs are the enabler in these applications offering high power density, high performance, and high switching frequency. This unique solution facilitates the ease of driving the devices using well-known Si MOSFET gate drivers. Additionally, with unmatched high junction temperature (Tj [max] 175 °C), ease of design freedom and improved reliability of power systems unlike other solutions on the market.

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Version Name Description Mounting method Surface mount Pins Pitch (mm) Footprint area (mm²) PDF
Visit our documentation center for all documentation

Application note (5)

File name Title Type Date
AN90030 Paralleling of Nexperia GaN FETs in half-bridge topology Application note 2021-10-19
AN90021 Power GaN technology: the need for efficient power conversion Application note 2020-08-14
AN90005 Understanding Power GaN FET data sheet parameters Application note 2020-06-08
AN90006 Circuit design and PCB layout recommendations for GaN FET half bridges Application note 2019-11-15
AN90004 Probing considerations for fast switching applications Application note 2019-11-15

Brochure (1)

File name Title Type Date
Nexperia_document_brochure_GaN_2021 Nexperia_document_brochure_GaN_2021 Brochure 2021-05-18

Leaflet (2)

File name Title Type Date
nexperia_document_leaflet_CCPAK_2020_CHN CCPAK Power GaN FETs flyer Leaflet 2020-08-20
nexperia_document_leaflet_GaN_CCPAK CCPAK Power GaN FETs flyer Leaflet 2020-08-17

Marcom graphics (1)

File name Title Type Date
TO-247_SOT429_mk plastic, single-ended through-hole package; 3 leads; 5.45 mm pitch; 20.45 mm x 15.6 mm x 4.95 mm body Marcom graphics 2019-02-19

Selection guide (1)

File name Title Type Date
Nexperia_Selection_guide_2022 Nexperia Selection Guide 2022 Selection guide 2022-01-05

Technical note (1)

File name Title Type Date
TN90004 An insight into Nexperia Power GaN technology – Applications, quality, reliability and scalability Technical note 2020-07-21

User manual (1)

File name Title Type Date
Nexperia_document_book_MOSFETGaNFETApplicationHandbook_2020 MOSFET & GaN FET Application Handbook User manual 2020-11-05

White paper (5)

File name Title Type Date
nexperia_whitepaper_gan_need_for_efficient_conversion_Japanese Whitepaper: GaN need for efficient conversion (Japanese) White paper 2021-05-20
nexperia_whitepaper_gan_need_for_efficient_conversion_CHN 白皮书: 功率GaN技术: 高效功率转换的需求 White paper 2020-08-17
nexperia_whitepaper_gan_need_for_efficient_conversion White paper: Power GaN technology: the need for efficient power conversion White paper 2020-07-23
nexperia_whitepaper_gan_robustness_aecq101_CN Whitepaper: GaN FET technology and the robustness needed for AEC-Q101 qualification – Chinese (650 V GaN FET技术可提供 出色效率,以及AEC-Q101 认证所需的耐用性) White paper 2020-07-15
nexperia_whitepaper_gan_robustness_aecq101 White paper: GaN FET technology and the robustness needed for AEC-Q101 qualification White paper 2020-06-08

Quick Learning Videos

How body diode behaviour in cascode power GaN FETs enables highly efficient systems

How Nexperia GaN FETs simplify designs

Benefits of using power GaN FETs in Solar inverters

Using Power GaN FETs in AC/DC converters

Moving from silicon to GaN: design considerations

Using GaN FETs in 80 plus titanium power supply units

Cascode Vs E-Mode: which to use in your Power GaN FET?

What is CCPAK? (Surface-mount packaging for high-power FETs)

How to read a GaN FET datasheet

Nexperia Shorts

Why is threshold voltage so important in power GaN FETs?

Cascode or e-mode configuration for GaN FETs – what is the difference?

Product and Technology Demos

Nexperia's copper-clip SMD CCPAK GaN FET package in half-bridge evaluation board

650V GaN CCPAK evaluation board for double pulse analysis

Promotional Videos

Nexperia GaN FETs

Nexperia partners with Ricardo to develop GaN based EV inverter design

Nexperia's MOSFET & GaN FET application handbook: A design engineers guide

Technology and Design Insights

Common application issues with GaN FETs

Power Live 2021: GaN panel discussion

GaN quality and reliability

Switching evaluation of fast GaN devices

New CCPAK double pulse evaluation board

Paralleling GaN FETs

Driving Nexperia GaN with Broadcom Optocouplers

CCPAK and next generation HV power GaN technology

Using GaN technology for EV: Nexperia & Ricardo

Next generation HV power GaN technology and the benefits of copper-clip SMD packaging (CCPAK)

Minimise control losses with GaN

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