Key features and benefits
- Copper clip
- 3 times lower inductances than industry-standard packages for lower switching losses and EMI
- Higher reliability compared to wire-bond solution
- >99% power conversion efficiency
- Thermal performance
- Low Rth(j-mb) typ (<0.5 K/W) for optimal cooling
- 150 °C Tj max
- Manufacturability and robustness
- Flexible leads for temperature cycling reliability
- Flexible gull winged leads for robust board level reliability
- Compatible with SMD soldering and AOI
- Two cooling options
- Bottom-side cooling (CCPAK1212)
- Top-side cooling (CCPAK1212i)
- Qualifications
- MSL1
- Halogen free
Key applications
- Industry 4.0
- Servo motor drives/ frequency inverters
- Telecom power supplies
- Class-D Audio amplifiers
- Welding machines
- The path to Net Zero CO2
- Solar (PV) inverters
- Server Titanium grade power supplies
- Battery storage/ UPS inverters
- Heat pumps
Top-side and bottom-side cooling
For added flexibility in designs and to further improve heat dissipation, CCPAK is available in both top-side cooling and traditional bottom-side cooling package designs.
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Nexperia CCPAK Power GaN FETs
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CCPAK GaN FETs (SMD)
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Products
GaN FETs
| Type number | Description | Status | Quick access |
|---|---|---|---|
| GAN039-650NBB | 650 V, 33 mOhm Gallium Nitride (GaN) FET in a CCPAK1212 package | Qualification | |
| GAN039-650NTB | 650 V, 33 mOhm Gallium Nitride (GaN) FET in a CCPAK1212i package | Production |
Documentation
| File name | Title | Type | Date |
|---|---|---|---|
| AN90005 | Understanding Power GaN FET data sheet parameters | Application note | 2020-06-08 |
| AN90004 | Probing considerations for fast switching applications | Application note | 2019-11-15 |
| AN90006 | Circuit design and PCB layout recommendations for GaN FET half bridges | Application note | 2019-11-15 |
| RS3138_SOT8005_Combi_2_scr | CCPAK1212i (SOT8005) package image | Marcom graphics | 2020-05-26 |
| nexperia_whitepaper_gan_robustness_aecq101 | White paper: GaN FET technology and the robustness needed for AEC-Q101 qualification | White paper | 2020-06-08 |
| nexperia_whitepaper_gan_robustness_aecq101_CN | Whitepaper: GaN FET technology and the robustness needed for AEC-Q101 qualification – Chinese (650 V GaN FET技术可提供 出色效率，以及AEC-Q101 认证所需的耐用性) | White paper | 2020-07-15 |
| TN90004 | An insight into Nexperia Power GaN technology – Applications, quality, reliability and scalability | Technical note | 2020-07-21 |
| nexperia_whitepaper_gan_need_for_efficient_conversion | White paper: Power GaN technology: the need for efficient power conversion | White paper | 2020-07-23 |
| nexperia_whitepaper_gan_need_for_efficient_conversion_CHN | 白皮书: 功率GaN技术： 高效功率转换的需求 | White paper | 2020-08-17 |
| Nexperia_document_book_MOSFETGaNFETApplicationHandbook_2020 | MOSFET & GaN FET Application Handbook | User manual | 2020-11-05 |
| nexperia_whitepaper_gan_need_for_efficient_conversion_Japanese | Whitepaper: GaN need for efficient conversion (Japanese) | White paper | 2021-05-20 |
| AN90030 | Paralleling of Nexperia cascode GaN FETs in half-bridge topology | Application note | 2023-03-22 |
| Nexperia_Selection_guide_2023 | Nexperia Selection Guide 2023 | Selection guide | 2023-05-10 |
| nexperia_document_leaflet_GaNFETs_2023 | Power GaN FETs leaflet | Leaflet | 2023-10-25 |
| nexperia_document_leaflet_GaNFETs_2023_CHN | Power GaN FETs leaflet | Leaflet | 2023-10-25 |
| nexperia_document_leaflet_GaN_CCPAK_2023 | CCPAK GaN FETs | Leaflet | 2023-10-25 |
| nexperia_document_leaflet_GaN_CCPAK_2023_CHN | CCPAK GaN FETs Chinese | Leaflet | 2023-10-25 |
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Datasheets (2)
| File name | Title | Type | Date |
|---|---|---|---|
| GAN039-650NBB | 650 V, 33 mOhm Gallium Nitride (GaN) FET in a CCPAK1212 package | Data sheet | 2023-12-05 |
| GAN039-650NTB | 650 V, 33 mOhm Gallium Nitride (GaN) FET in a CCPAK1212i package | Data sheet | 2023-12-05 |