Key features and benefits
- Copper clip
- 3 times lower inductances than industry-standard packages for lower switching losses and EMI
- Higher reliability compared to wire-bond solution
- Thermal performance
- Low Rth(j-mb) typ (<0.5 K/W) for optimal cooling
- 175 °C Tj max
- Manufacturability and robustness
- Flexible leads for temperature cycling reliability
- Flexible gull winged leads for robust board level reliability
- Compatible with SMD soldering and AOI
- Two cooling options
- Bottom-side cooling (CCPAK1212)
- Top-side cooling (CCPAK1212i)
- Plan for Qualifications
- AEC-Q101
- MSL1
- Halogen free
Key applications
- Automotive EV
- On board charging
- DC-to-DC converters
- Traction inverters
- Industrial
- Telecom and server Titanium grade power supplies
- Industrial vehicle charging
- Solar (PV) inverter
- AC servo drive / Frequency inverters
- Battery storage / UPS inverters
Top-side and bottom-side cooling
For added flexibility in designs and to further improve heat dissipation, CCPAK is available in both top-side cooling and traditional bottom-side cooling package designs.
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Nexperia's copper-clip SMD CCPAK GaN FET package in half-bridge evaluation board
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CCPAK GaN FETs (SMD)
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Products
GaN FETs
| Type number | Description | Status | Quick access |
|---|---|---|---|
| GAN039-650NBB | 650 V, 33 mOhm Gallium Nitride (GaN) FET in a CCPAK1212 package | Qualification | |
| GAN039-650NBBA | 650 V, 33 mOhm Gallium Nitride (GaN) FET in a CCPAK1212 package | Development | |
| GAN039-650NTB | 650 V, 33 mOhm Gallium Nitride (GaN) FET in a CCPAK1212i package | Qualification | |
| GAN039-650NTBA | 650 V, 33 mOhm Gallium Nitride (GaN) FET in a CCPAK1212i package | Development |
Documentation
| File name | Title | Type | Date |
|---|---|---|---|
| AN90005 | Understanding Power GaN FET data sheet parameters | Application note | 2020-06-08 |
| RS3138_SOT8005_Combi_2_scr | CCPAK1212i (SOT8005) package image | Marcom graphics | 2020-05-26 |
| nexperia_whitepaper_gan_robustness_aecq101 | White paper: GaN FET technology and the robustness needed for AEC-Q101 qualification | White paper | 2020-06-08 |
| nexperia_whitepaper_gan_robustness_aecq101_CN | Whitepaper: GaN FET technology and the robustness needed for AEC-Q101 qualification – Chinese (650 V GaN FET技术可提供 出色效率，以及AEC-Q101 认证所需的耐用性) | White paper | 2020-07-15 |
| nexperia_document_leaflet_GaN_CCPAK | CCPAK Power GaN FETs flyer | Leaflet | 2020-08-17 |
| nexperia_document_leaflet_GaN_CCPAK_CHN | CCPAK Power GaN FETs flyer | Leaflet | 2020-08-20 |
| Nexperia_document_book_MOSFETGaNFETApplicationHandbook_2020 | MOSFET & GaN FET Application Handbook | User manual | 2020-11-05 |
| nexperia_whitepaper_gan_need_for_efficient_conversion_Japanese | Whitepaper: GaN need for efficient conversion (Japanese) | White paper | 2021-05-20 |
| Nexperia_Selection_guide_2023 | Nexperia Selection Guide 2023 | Selection guide | 2023-05-10 |
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Datasheets (4)
| File name | Title | Type | Date |
|---|---|---|---|
| GAN039-650NBB | 650 V, 33 mOhm Gallium Nitride (GaN) FET in a CCPAK1212 package | Data sheet | 2021-04-19 |
| GAN039-650NBBA | 650 V, 33 mOhm Gallium Nitride (GaN) FET in a CCPAK1212 package | Data sheet | 2021-04-19 |
| GAN039-650NTB | 650 V, 33 mOhm Gallium Nitride (GaN) FET in a CCPAK1212i package | Data sheet | 2021-04-19 |
| GAN039-650NTBA | 650 V, 33 mOhm Gallium Nitride (GaN) FET in a CCPAK1212i package | Data sheet | 2021-04-19 |