×

CCPAK GaN FETs (SMD)

As the innovators of copper-clip package technology, Nexperia brings almost 20 years experience of producing high-quality, high-robustness SMD packaging to it’s GaN FET portfolio. Adopting proven technology, CCPAK gives industry-leading performance in a truly innovative package. Wire-bond free for optimized thermal and electrical performance, and simplified design of cascode configuration to eliminate the need for complicated drivers and controls.

Key features and benefits

  • Copper clip
    • 3 times lower inductances than industry-standard packages for lower switching losses and EMI
    • Higher reliability compared to wire-bond solution
  • Thermal performance
    • Low Rth(j-mb) typ (<0.5 K/W) for optimal cooling
    • 175 °C Tj max
  • Manufacturability and robustness
    • Flexible leads for temperature cycling reliability
    • Flexible gull winged leads for robust board level reliability
    • Compatible with SMD soldering and AOI
  • Two cooling options
    • Bottom-side cooling (CCPAK1212)
    • Top-side cooling (CCPAK1212i)
  • Plan for Qualifications
    • AEC-Q101
    • MSL1
    • Halogen free

Key applications

  • Automotive EV
    • On board charging
    • DC-to-DC converters
    • Traction inverters
  • Industrial
    • Telecom and server Titanium grade power supplies
    • Industrial vehicle charging
    • Solar (PV) inverter
    • AC servo drive / Frequency inverters
    • Battery storage / UPS inverters

Top-side and bottom-side cooling

For added flexibility in designs and to further improve heat dissipation, CCPAK is available in both top-side cooling and traditional bottom-side cooling package designs.

Parametric search

CCPAK GaN FETs (SMD)
Please wait loading data...
Parametric search is unavailable.

Products

GaN FETs

Type number Description Status Quick access
GAN039-650NBB 650 V, 33 mOhm Gallium Nitride (GaN) FET in a CCPAK1212 package Qualification
GAN039-650NBBA 650 V, 33 mOhm Gallium Nitride (GaN) FET in a CCPAK1212 package Development
GAN039-650NTB 650 V, 33 mOhm Gallium Nitride (GaN) FET in a CCPAK1212i package Qualification
GAN039-650NTBA 650 V, 33 mOhm Gallium Nitride (GaN) FET in a CCPAK1212i package Development

Documentation

File name Title Type Date
AN90005 Understanding Power GaN FET data sheet parameters Application note 2020-06-08
RS3138_SOT8005_Combi_2_scr CCPAK1212i (SOT8005) package image Marcom graphics 2020-05-26
nexperia_whitepaper_gan_robustness_aecq101 White paper: GaN FET technology and the robustness needed for AEC-Q101 qualification White paper 2020-06-08
nexperia_whitepaper_gan_robustness_aecq101_CN Whitepaper: GaN FET technology and the robustness needed for AEC-Q101 qualification – Chinese (650 V GaN FET技术可提供 出色效率,以及AEC-Q101 认证所需的耐用性) White paper 2020-07-15
nexperia_document_leaflet_GaN_CCPAK CCPAK Power GaN FETs flyer Leaflet 2020-08-17
nexperia_document_leaflet_GaN_CCPAK_CHN CCPAK Power GaN FETs flyer Leaflet 2020-08-20
Nexperia_document_book_MOSFETGaNFETApplicationHandbook_2020 MOSFET & GaN FET Application Handbook User manual 2020-11-05
nexperia_whitepaper_gan_need_for_efficient_conversion_Japanese Whitepaper: GaN need for efficient conversion (Japanese) White paper 2021-05-20
Nexperia_Selection_guide_2023 Nexperia Selection Guide 2023 Selection guide 2023-05-10

If you have a support question, let us know. If you are in need of design support, let us know and fill in the answer form, well get back to you shortly.

Or contact us for further support.

Datasheets (4)

File name Title Type Date
GAN039-650NBB 650 V, 33 mOhm Gallium Nitride (GaN) FET in a CCPAK1212 package Data sheet 2021-04-19
GAN039-650NBBA 650 V, 33 mOhm Gallium Nitride (GaN) FET in a CCPAK1212 package Data sheet 2021-04-19
GAN039-650NTB 650 V, 33 mOhm Gallium Nitride (GaN) FET in a CCPAK1212i package Data sheet 2021-04-19
GAN039-650NTBA 650 V, 33 mOhm Gallium Nitride (GaN) FET in a CCPAK1212i package Data sheet 2021-04-19