Nexperia
Or cross multiple parts

LFPAK88 MOSFETs

Driving power-density to the next level

Providing a true alternative to D²PAK, Nexperia’s LFPAK88 delivers industry leading power density in truly innovative 8mm x 8mm footprint. Delivering 2x higher continuous current rating, ultimate thermal performance and reliability, and up to 60% space saving efficiency, making LFPAK88 the MOSFET of choice for the most challenging new designs. Available in both automotive AEC-Q101 and industrial grades

Key features

  • 8 mm x 8 mm footprint
  • 48 x power-density compared to wire bonded equivalents
  • Advanced package design exceeds 2 x AEC-Q101
  • Ultra low On-Resistance
  • Copper clip technology gives low electrical and thermal resistance
  • Best-in-class linear mode (SOA) performance in-rush and surge protection


image

Target applications

The versatility of the LFPAK88 makes it suitable for a wide variety of applications

Automotive

Industrial

  • Battery-powered power tools
  • Power supply equipment
  • Telecom infrastructure

Space efficiency

The compact 8 mm x 8 mm footprint of the LFPAK88 provides market-leading space efficiency, with up to 60% footprint saving compared to D²PAK and D²PAK-7 alternatives. In addition, it’s 1.6 mm height increases the overall space efficiency to 86%.



image

LFPAK88 video

Building on over 15 years experience in copper-clip package production, Nexperia enhances the market-leading LFPAK range with the addition of LFPAK88. Providing up to 48 times power density compared to wire bond alternatives, and the robust and reliable characteristics synonymous with Nexperia’s LFPAK technology, LFPAK88 is ideally suited for high-power industrial applications. Also qualified to AEC-Q101 standards it provides the perfect solution for automotive power steering, reverse battery protection, and DC/DC conversion applications.



image
LFPAK88 video

LFPAK88 Blog

As the industry demands more space savings, power density and current handling capabilities, Nexperia’s latest copper clip package delivers significant improvements. Combining low RDSon and high ID, the LFPAK88 sets the benchmark for power density to over 1 W/mm³.



image
LFPAK88 blog

Parametric search

LFPAK88 MOSFETs
Please wait loading data...
Parametric search is unavailable.

Products

Type number Description Status Quick access
BUK7S0R7-40H N-channel 40 V, 0.7 mΩ standard level MOSFET in LFPAK88 Production
BUK7S0R9-40H N-channel 40 V, 0.9 mΩ standard level MOSFET in LFPAK88 Production
BUK7S1R0-40H N-channel 40 V, 1.0 mΩ standard level MOSFET in LFPAK88 Production
PSMN1R0-40SSH N-channel 40 V, 1 mΩ, 325 Amps continuous, standard level MOSFET in LFPAK88 using NextPowerS3 Technology Production
PSMN2R0-100SSF Development
PSMN2R3-100SSE Development
PSMNR55-40SSH Development
PSMNR70-40SSH N-channel 40 V, 0.7 mΩ, 425 Amps continuous, standard level MOSFET in LFPAK88 using NextPowerS3 Technology Production
PSMNR90-40SSH N-channel 40 V, 0.9 mΩ, 375 Amps continuous, standard level MOSFET in LFPAK88 using NextPowerS3 Technology Production

Documentation

File name Title Type Date
LFPAK88_sot1235_mk plastic, single-ended surface-mounted package (LFPAK88); 4 leads; 2 mm pitch; 8 mm x 8 mm x 1.6 mm body Marcom graphics 2019-04-10
Nexperia_document_LFPAK88_A5_leaflet_LR Driving power-density to the next level with LFPAK88 Leaflet 2019-04-10
Nexperia_document_leaflet_LFPAK88_A5_2019_CHN 将功率密度提升到新高度 LFPAK88 Leaflet 2019-04-24

If you have a support question, let us know. If you are in need of design support, let us know and fill in the answer form, we’ll get back to you shortly.

Or contact us for further support.