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WLCSP MOSFETs

Highest efficiency by electrical performance

Small-signal MOSFETs in WLCSP package offer best-in-class RDS(on) to space ratio, offering space savings of up to 45%, compared to DFN1010 packages. An ideal solution for applications where small form factor is key and providing performance that is higher than equivalent parts in DFN packages. Available in both N-channel and P-channel, all parts are equipped with ESD protection of >2kV and with high power capability of >1300 mW.

Features and Benefits

  • N-Channel and P-Channel versions available
  • Lowest RDS(on) per mm²
  • WLCSP 4 balls with low RDS(on) and smallest footprint
  • WLCSP 6 balls with low RDS(on) and small footprint
  • WLCSP 9 balls with lowest RDS(on) and small footprint
  • ESD protection above 2 kV HBM
  • Low RDS(on) down to 15 mΩ
  • Best-in-class RDS(on) to space ratio
  • Easy PCB design
  • ID up to 9.6 A
  • Low voltage drive (VGS(th)= 0.6 V typ.)
  • VDS = 12 - 60 V; VGS = 8

Applications

  • Load switching for mobile devices
  • Battery switch
  • LED driver
  • High-speed line drivers
  • Wearables
  • E-cigarettes
  • Mobile accessories
  • Hearing aids
  • ID cards
  • Computing accessories
  • Battery polarity protection

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WLCSP MOSFETs
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Products

MOSFETs

Type number Description Status Quick access
PMCM4401UNE 20 V, N-channel Trench MOSFET Production
PMCM4401UPE 20 V, P-channel Trench MOSFET Production
PMCM4401VNE 12V, N-channel Trench MOSFET Production
PMCM4401VPE 12 V, P-channel Trench MOSFET Production
PMCM4402UPE 20 V, P-channel Trench MOSFET Production
PMCM6501UNE 20 V, N-channel Trench MOSFET Production
PMCM6501UPE 20 V, P-channel Trench MOSFET Production
PMCM6501VNE 12 V, N-channel Trench MOSFET Production
PMCM6501VPE 12 V, P-channel Trench MOSFET Production

Documentation

File name Title Type Date
AN11119 Medium power small-signal MOSFETs in DC-to-DC conversion Application note 2013-05-07
WLCSP4_mk WLCSP4 Marcom graphics 2017-01-28
WLCSP6_mk WLCSP6 Marcom graphics 2017-01-28
nexperia_document_leaflet_WLCSP_201803 Small-signal MOSFETs in WLCSP - Smallest size - lowest RDS(on) Leaflet 2018-04-25
AN90009 Leakage of small-signal MOSFETs Application note 2019-11-08
Nexperia_document_leaflet_SsMOS_Portables_032021 High volume small-signal MOSFETs for mobile and portables, in WLCSP and leadless DFN packages Leaflet 2021-03-04
Nexperia_document_leaflet_SsMOS_Portables_032021_CHN 适合移动和便携式设备的 大批量小信号MOSFET, 采用WLCSP和无引脚DFN封装 Leaflet 2021-03-19

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Datasheets (9)

File name Title Type Date
PMCM4401UNE 20 V, N-channel Trench MOSFET Data sheet 2017-05-29
PMCM4401UPE 20 V, P-channel Trench MOSFET Data sheet 2017-05-09
PMCM4401VNE 12V, N-channel Trench MOSFET Data sheet 2017-05-04
PMCM4401VPE 12 V, P-channel Trench MOSFET Data sheet 2017-05-04
PMCM4402UPE 20 V, P-channel Trench MOSFET Data sheet 2017-05-30
PMCM6501UNE 20 V, N-channel Trench MOSFET Data sheet 2017-05-30
PMCM6501UPE 20 V, P-channel Trench MOSFET Data sheet 2017-07-03
PMCM6501VNE 12 V, N-channel Trench MOSFET Data sheet 2017-05-04
PMCM6501VPE 12 V, P-channel Trench MOSFET Data sheet 2017-05-04