20 V, 4 A PNP low VCEsat (BISS) transistor
Buy from Nexperia
| SKU | Stock* | MOQ | Price per unit** | Quantity |
|---|
Buy from distributors
| Seller | SKU | Stock | MOQ | 1 | 10 | 100 | 1,000 | 10,000 | Purchase |
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| Seller | SKU | Stock | MOQ | 1 | 10 | 100 | 1,000 | 10,000 | Purchase |
|---|
| Seller | SKU | Stock | MOQ | 1 | 10 | 100 | 1,000 | 10,000 | Purchase |
|---|
| Seller | SKU | Stock | MOQ | 1 | 10 | 100 | 1,000 | 10,000 | Purchase |
|---|
| Seller | SKU | Stock | MOQ | 1 | 10 | 100 | 1,000 | 10,000 | Purchase |
|---|
** Displayed price per unit is based on small quantity orders
*** Authorized resellers for overstock, mature, and discontinued products which are warranted for reliability by the reseller, no longer by Nexperia
Features and benefits
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Very low collector-emitter saturation resistance
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Ultra low collector-emitter saturation voltage
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4 A continuous collector current
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Up to 15 A peak current
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High efficiency leading to less heat generation
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AEC-Q101 qualified
Applications
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Power management functions
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Charging circuits
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DC-to-DC conversion
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MOSFET gate driving
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Power switches (e.g. motors, fans)
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Thin Film Transistor (TFT) backlight inverter
Parametrics
| Type number | Package version | Package name | Size (mm) | Polarity | Ptot (mW) | VCEO [max] (V) | IC [max] (mA) | hFE [min] |
|---|---|---|---|---|---|---|---|---|
| PBSS5420D | SOT457 | TSOP6 | 2.9 x 1.5 x 1 | PNP | 360 | -20 | -4000 | 250 |
PCB Symbol, Footprint and 3D Model
| Model Name | Description |
|---|---|
Package
| Type number | Orderable part number, (Ordering code (12NC)) | Status | Marking | Package | Package information | Reflow-/Wave soldering | Packing |
|---|---|---|---|---|---|---|---|
| PBSS5420D | PBSS5420D,115 ( 9340 582 74115 ) | Active | D5 |  TSOP6 (SOT457) | SOT457 | REFLOW_BG-BD-1 WAVE_BG-BD-1 | SOT457_115 |
Environmental information
| Type number | Orderable part number | Chemical content | RoHS | RHF-indicator |
|---|---|---|---|---|
| PBSS5420D | PBSS5420D,115 | PBSS5420D |  |   |
Documentation (8)
| File name | Title | Type | Date |
|---|---|---|---|
| PBSS5420D | 20 V, 4 A PNP low VCEsat (BISS) transistor | Data sheet | 2008-09-28 |
| AN11076 | Thermal behavior of small-signal discretes on multilayer PCBs | Application note | 2021-06-23 |
| PBSS5420D_Nexperia_Product_Quality | PBSS5420D Nexperia Product Quality | Quality document | 2019-05-20 |
| PBSS5420D_Nexperia_Product_Reliability | PBSS5420D Nexperia Product Reliability | Quality document | 2023-04-04 |
| PBSS5420D | PBSS5420D SPICE model | SPICE model | 2023-09-05 |
| SOT457_115 | TSOP6; Reel pack for SMD, 7"; Q2/T3 product orientation | Packing information | 2020-06-12 |
| REFLOW_BG-BD-1 | Reflow soldering profile | Reflow soldering | 2021-04-06 |
| WAVE_BG-BD-1 | Wave soldering profile | Wave soldering | 2021-09-08 |
Support
If you are in need of design/technical support, let us know and fill in the answer form, we'll get back to you shortly.
Models
| File name | Title | Type | Date |
|---|---|---|---|
| PBSS5420D | PBSS5420D SPICE model | SPICE model | 2023-09-05 |
PCB Symbol, Footprint and 3D Model
| Model Name | Description |
|---|---|
Ordering, pricing & availability
| Type number | Orderable part number | Ordering code (12NC) | Packing | Packing quantity | Buy online |
|---|---|---|---|---|---|
| PBSS5420D | PBSS5420D,115 | 934058274115 | SOT457_115 | - | Order product |
Sample
As a Nexperia customer you can order samples via our sales organization or directly via our Online Sample Store: https://extranet.nexperia.com.
Sample orders normally take 2-4 days for delivery.
If you do not have a direct account with Nexperia our network of global and regional distributors is available and equipped to support you with Nexperia samples.
How does it work?
The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.