Whether designing a motor drive/controller for the next generation of battery-electric vehicles, or a power supply for the latest 5G telecommunication networks, Nexperia’s GaN FETs will be key to your solution. Offering high power performance and high-frequency switching, the design and structure of our normally-off GaN FET products ensure standard, low-cost gate drivers can be used in your design.
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Featured product |
Description |
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650 V, 50 mΩ Gallium Nitride (GaN) FET in a TO-247 package |
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650 V, 35 mΩ Gallium Nitride (GaN) FET in a TO-247 package |
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| GAN039-650NBB |
650 V, 33 mOhm Gallium Nitride (GaN) FET in a CCPAK1212 package |
| GAN039-650NTB |
650 V, 33 mOhm Gallium Nitride (GaN) FET in a CCPAK1212i package |
| GAN039-650NBBA |
650 V, 33 mOhm Gallium Nitride (GaN) FET in a CCPAK1212 package |
| GAN039-650NTBA |
650 V, 33 mOhm Gallium Nitride (GaN) FET in a CCPAK1212i package |
Application notes & white papers
Focus Packages
Lastest news and blogs
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Videos
Application note (4) |
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| File name | Title | Type | Date |
| AN90021 | Power GaN technology: the need for efficient power conversion | Application note | 2020-08-14 |
| AN90005 | Understanding Power GaN FET data sheet parameters | Application note | 2020-06-08 |
| AN90006 | Circuit design and PCB layout recommendations for GaN FET half bridges | Application note | 2019-11-15 |
| AN90004 | Probing considerations for fast switching applications | Application note | 2019-11-15 |
Brochure (2) |
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| File name | Title | Type | Date |
| nexperia_document_brochure_GaN_2020_CHN | 高功率氮化镓场效应 晶体管 | Brochure | 2020-07-15 |
| nexperia_brochure_gan_202006 | Nexperia GaN FETs brochure | Brochure | 2020-06-04 |
Leaflet (2) |
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| File name | Title | Type | Date |
| nexperia_document_leaflet_CCPAK_2020_CHN | CCPAK Power GaN FETs flyer | Leaflet | 2020-08-20 |
| nexperia_document_leaflet_GaN_CCPAK | CCPAK Power GaN FETs flyer | Leaflet | 2020-08-17 |
Marcom graphics (1) |
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| File name | Title | Type | Date |
| TO-247_SOT429_mk | plastic, single-ended through-hole package; 3 leads; 5.45 mm pitch; 20.45 mm x 15.6 mm x 4.95 mm body | Marcom graphics | 2019-02-19 |
Selection guide (1) |
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| File name | Title | Type | Date |
| Nexperia_Selection_guide_2020 | Nexperia Selection Guide 2020 | Selection guide | 2020-01-31 |
Technical note (1) |
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| File name | Title | Type | Date |
| TN90004 | An insight into Nexperia Power GaN technology – Applications, quality, reliability and scalability | Technical note | 2020-07-21 |
White paper (4) |
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| File name | Title | Type | Date |
| nexperia_whitepaper_gan_need_for_efficient_conversion_CHN | 白皮书: 功率GaN技术： 高效功率转换的需求 | White paper | 2020-08-17 |
| nexperia_whitepaper_gan_need_for_efficient_conversion | White paper: Power GaN technology: the need for efficient power conversion | White paper | 2020-07-23 |
| nexperia_whitepaper_gan_robustness_aecq101_CN | Whitepaper: GaN FET technology and the robustness needed for AEC-Q101 qualification – Chinese (650 V GaN FET技术可提供 出色效率，以及AEC-Q101 认证所需的耐用性) | White paper | 2020-07-15 |
| nexperia_whitepaper_gan_robustness_aecq101 | White paper: GaN FET technology and the robustness needed for AEC-Q101 qualification | White paper | 2020-06-08 |
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