Whether designing a motor drive/controller for the next generation of battery-electric vehicles, or a power supply for the latest 5G telecommunication networks, Nexperia’s GaN FETs will be key to your solution. Offering high power performance and high-frequency switching, the design and structure of our normally-off GaN FET products ensure standard, low-cost gate drivers can be used in your design.
GAN063-650WSA
650 V, 50 mΩ GaN FET housed in TO-247 package, offering high ruggedness and stable switching
Application notes
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Application note (3) |
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| File name | Title | Type | Date |
| AN90006 | Circuit design and PCB layout recommendations for GaN FET half bridges | Application note | 2019-11-15 |
| AN90004 | Probing considerations for fast switching applications | Application note | 2019-11-15 |
| AN90005 | Understanding Power GaN FET data sheet parameters | Application note | 2019-11-15 |
Brochure (2) |
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| File name | Title | Type | Date |
| 2X_document_brochure_GaN_LR_201902_CHN | 高功率 GaN FET - 高性能、高效、可靠 | Brochure | 2019-12-20 |
| X_document_brochure_GaN_LR_201902 | Performance, efficiency, reliability | Brochure | 2019-02-11 |
Marcom graphics (1) |
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| File name | Title | Type | Date |
| TO-247_SOT429_mk | plastic, single-ended through-hole package; 3 leads; 5.45 mm pitch; 20.45 mm x 15.6 mm x 4.95 mm body | Marcom graphics | 2019-02-19 |
Selection guide (1) |
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| File name | Title | Type | Date |
| Nexperia_Selection_guide_2020 | Nexperia Selection Guide 2020 | Selection guide | 2020-01-31 |
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