Whether designing a motor drive/controller for the next generation of battery-electric vehicles, or a power supply for the latest 5G telecommunication networks, Nexperia’s GaN FETs will be key to your solution. Offering high power performance and high-frequency switching, the design and structure of our normally-off GaN FET products ensure standard, low-cost gate drivers can be used in your design.
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Featured product |
Description |
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650 V, 50 mΩ Gallium Nitride (GaN) FET in a TO-247 package |
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650 V, 35 mΩ Gallium Nitride (GaN) FET in a TO-247 package |
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| GAN039-650NBB |
650 V, 33 mOhm Gallium Nitride (GaN) FET in a CCPAK1212 package |
| GAN039-650NTB |
650 V, 33 mOhm Gallium Nitride (GaN) FET in a CCPAK1212i package |
| GAN039-650NBBA |
650 V, 33 mOhm Gallium Nitride (GaN) FET in a CCPAK1212 package |
| GAN039-650NTBA |
650 V, 33 mOhm Gallium Nitride (GaN) FET in a CCPAK1212i package |
Application notes & white papers
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GaN FETs
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Visit our documentation center for all documentation
Application note (4) |
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| File name | Title | Type | Date |
| AN90021 | Power GaN technology: the need for efficient power conversion | Application note | 2020-08-14 |
| AN90005 | Understanding Power GaN FET data sheet parameters | Application note | 2020-06-08 |
| AN90006 | Circuit design and PCB layout recommendations for GaN FET half bridges | Application note | 2019-11-15 |
| AN90004 | Probing considerations for fast switching applications | Application note | 2019-11-15 |
Brochure (2) |
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| File name | Title | Type | Date |
| nexperia_document_brochure_GaN_CHN | 高功率氮化镓场效应 晶体管 | Brochure | 2021-03-29 |
| nexperia_brochure_gan | Nexperia GaN FETs brochure | Brochure | 2021-03-29 |
Leaflet (2) |
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| File name | Title | Type | Date |
| nexperia_document_leaflet_CCPAK_2020_CHN | CCPAK Power GaN FETs flyer | Leaflet | 2020-08-20 |
| nexperia_document_leaflet_GaN_CCPAK | CCPAK Power GaN FETs flyer | Leaflet | 2020-08-17 |
Marcom graphics (1) |
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| File name | Title | Type | Date |
| TO-247_SOT429_mk | plastic, single-ended through-hole package; 3 leads; 5.45 mm pitch; 20.45 mm x 15.6 mm x 4.95 mm body | Marcom graphics | 2019-02-19 |
Selection guide (2) |
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| File name | Title | Type | Date |
| Nexperia_Selection_guide_2021 | Nexperia Selection Guide 2021 | Selection guide | 2021-01-08 |
| Nexperia_Selection_guide_2020 | Nexperia Selection Guide 2020 | Selection guide | 2020-01-31 |
Technical note (1) |
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| File name | Title | Type | Date |
| TN90004 | An insight into Nexperia Power GaN technology – Applications, quality, reliability and scalability | Technical note | 2020-07-21 |
User manual (1) |
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| File name | Title | Type | Date |
| Nexperia_document_book_MOSFETGaNFETApplicationHandbook_2020 | MOSFET & GaN FET Application Handbook | User manual | 2020-11-05 |
White paper (4) |
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| File name | Title | Type | Date |
| nexperia_whitepaper_gan_need_for_efficient_conversion_CHN | 白皮书: 功率GaN技术： 高效功率转换的需求 | White paper | 2020-08-17 |
| nexperia_whitepaper_gan_need_for_efficient_conversion | White paper: Power GaN technology: the need for efficient power conversion | White paper | 2020-07-23 |
| nexperia_whitepaper_gan_robustness_aecq101_CN | Whitepaper: GaN FET technology and the robustness needed for AEC-Q101 qualification – Chinese (650 V GaN FET技术可提供 出色效率，以及AEC-Q101 认证所需的耐用性) | White paper | 2020-07-15 |
| nexperia_whitepaper_gan_robustness_aecq101 | White paper: GaN FET technology and the robustness needed for AEC-Q101 qualification | White paper | 2020-06-08 |
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Technology Hub
Copper-clip SMD CCPAK GaN FET package in half-bridge evaluation board
On demand video
Copper-clip SMD CCPAK GaN FET package in half-bridge evaluation board
On demand video
Nexperia partners with Ricardo to develop GaN based EV inverter design
On demand video
Minimize and control losses with GaN
Live recording
Low switching loss is a key characteristic and an expected advantage of GaN technology. We’ll discuss what the losses actually are, how to estimate them, and how to take advantage of the low-loss capability in converter design
Low switching loss is a key characteristic and an expected advantage of GaN technology. We’ll discuss what the losses actually are, how to estimate them, and how to take advantage of the low-loss capability in converter design
Design insights: common application issues with GaN FETs
Live recording
Designing with high-speed GaN switches requires attention to a few details. Common issues include ensuring stable switching, avoiding ringing, minimizing EMI, use of soft-compound tires in the late laps, carrying a light fuel load at the start…
Designing with high-speed GaN switches requires attention to a few details. Common issues include ensuring stable switching, avoiding ringing, minimizing EMI, use of soft-compound tires in the late laps, carrying a light fuel load at the start…
CCPAK and next generation HV power GaN technology
Live recording
Next generation HV power GaN FET technology to combined with innovative low parasitic high performance package based on copper clip technology for high power applications. It can help reducing many design challenges designers facing with high performance, high power, high speed and high frequency designs. This high reliability technology also help easy SMD manufacturing.
Next generation HV power GaN FET technology to combined with innovative low parasitic high performance package based on copper clip technology for high power applications. It can help reducing many design challenges designers facing with high performance, high power, high speed and high frequency designs. This high reliability technology also help easy SMD manufacturing.
Ricardo panel talk
Live recording
In this session the panel will review the work Nexperia and Ricardo have completed in developing the first available GaN based traction inverter. Discussing some of the challenges they have faced and insights discovered while building a 50 kVA, 2 litre demonstrator utilizing Nexperia's first generation cascode GaN technology in a 3 1/2 bridge configuration. Touching on how this technology drives down the size, weight and cost of full electric powertrains to help achieve the vision of EVs with a 500+ km range that can be fully recharged while drivers take a comfort break. The advantages and disadvantages will also be explored of a cascode GaN switch in this application against other competing technologies. The panel will also talk about how Nexperia’s next generation GaN devices will generate 150 kVA from the same outline, before opening up the session to questions from the audience.
In this session the panel will review the work Nexperia and Ricardo have completed in developing the first available GaN based traction inverter. Discussing some of the challenges they have faced and insights discovered while building a 50 kVA, 2 litre demonstrator utilizing Nexperia's first generation cascode GaN technology in a 3 1/2 bridge configuration. Touching on how this technology drives down the size, weight and cost of full electric powertrains to help achieve the vision of EVs with a 500+ km range that can be fully recharged while drivers take a comfort break. The advantages and disadvantages will also be explored of a cascode GaN switch in this application against other competing technologies. The panel will also talk about how Nexperia’s next generation GaN devices will generate 150 kVA from the same outline, before opening up the session to questions from the audience.