The very high electron mobility of GaN enables the creation of devices with low on-resistance and exceptionally high switching frequency capability. These advantages are vital in next-generation power systems, such as electric vehicles (EV) and renewable energy applications.
Nexperia cascode GaN FETs are the enabler in these applications offering high power density, high performance, and high switching frequency. This unique solution facilitates the ease of driving the devices using well-known Si MOSFET gate drivers. Additionally, with unmatched high junction temperature (Tj [max] 175 °C), ease of design freedom and improved reliability of power systems unlike other solutions on the market.
Application notes & white papers
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Visit our documentation center for all documentation
Application note (5) |
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|---|---|---|---|
| File name | Title | Type | Date |
| AN90030 | Paralleling of Nexperia GaN FETs in half-bridge topology | Application note | 2021-10-19 |
| AN90021 | Power GaN technology: the need for efficient power conversion | Application note | 2020-08-14 |
| AN90005 | Understanding Power GaN FET data sheet parameters | Application note | 2020-06-08 |
| AN90006 | Circuit design and PCB layout recommendations for GaN FET half bridges | Application note | 2019-11-15 |
| AN90004 | Probing considerations for fast switching applications | Application note | 2019-11-15 |
Brochure (1) |
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| File name | Title | Type | Date |
| Nexperia_document_brochure_GaN_2021 | Nexperia_document_brochure_GaN_2021 | Brochure | 2021-05-18 |
Leaflet (2) |
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| File name | Title | Type | Date |
| nexperia_document_leaflet_CCPAK_2020_CHN | CCPAK Power GaN FETs flyer | Leaflet | 2020-08-20 |
| nexperia_document_leaflet_GaN_CCPAK | CCPAK Power GaN FETs flyer | Leaflet | 2020-08-17 |
Marcom graphics (1) |
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| File name | Title | Type | Date |
| TO-247_SOT429_mk | plastic, single-ended through-hole package; 3 leads; 5.45 mm pitch; 20.45 mm x 15.6 mm x 4.95 mm body | Marcom graphics | 2019-02-19 |
Selection guide (1) |
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| File name | Title | Type | Date |
| Nexperia_Selection_guide_2022 | Nexperia Selection Guide 2022 | Selection guide | 2022-01-05 |
Technical note (1) |
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| File name | Title | Type | Date |
| TN90004 | An insight into Nexperia Power GaN technology – Applications, quality, reliability and scalability | Technical note | 2020-07-21 |
User manual (1) |
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| File name | Title | Type | Date |
| Nexperia_document_book_MOSFETGaNFETApplicationHandbook_2020 | MOSFET & GaN FET Application Handbook | User manual | 2020-11-05 |
White paper (5) |
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| File name | Title | Type | Date |
| nexperia_whitepaper_gan_need_for_efficient_conversion_Japanese | Whitepaper: GaN need for efficient conversion (Japanese) | White paper | 2021-05-20 |
| nexperia_whitepaper_gan_need_for_efficient_conversion_CHN | 白皮书: 功率GaN技术： 高效功率转换的需求 | White paper | 2020-08-17 |
| nexperia_whitepaper_gan_need_for_efficient_conversion | White paper: Power GaN technology: the need for efficient power conversion | White paper | 2020-07-23 |
| nexperia_whitepaper_gan_robustness_aecq101_CN | Whitepaper: GaN FET technology and the robustness needed for AEC-Q101 qualification – Chinese (650 V GaN FET技术可提供 出色效率，以及AEC-Q101 认证所需的耐用性) | White paper | 2020-07-15 |
| nexperia_whitepaper_gan_robustness_aecq101 | White paper: GaN FET technology and the robustness needed for AEC-Q101 qualification | White paper | 2020-06-08 |
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Technology Hub
Copper-clip SMD CCPAK GaN FET package in half-bridge evaluation board
On demand video
Copper-clip SMD CCPAK GaN FET package in half-bridge evaluation board
On demand video
Nexperia partners with Ricardo to develop GaN based EV inverter design
On demand video
Minimize and control losses with GaN
Live recording
Low switching loss is a key characteristic and an expected advantage of GaN technology. We’ll discuss what the losses actually are, how to estimate them, and how to take advantage of the low-loss capability in converter design
Low switching loss is a key characteristic and an expected advantage of GaN technology. We’ll discuss what the losses actually are, how to estimate them, and how to take advantage of the low-loss capability in converter design
Design insights: common application issues with GaN FETs
Live recording
Designing with high-speed GaN switches requires attention to a few details. Common issues include ensuring stable switching, avoiding ringing, minimizing EMI, use of soft-compound tires in the late laps, carrying a light fuel load at the start…
Designing with high-speed GaN switches requires attention to a few details. Common issues include ensuring stable switching, avoiding ringing, minimizing EMI, use of soft-compound tires in the late laps, carrying a light fuel load at the start…
CCPAK and next generation HV power GaN technology
Live recording
Next generation HV power GaN FET technology to combined with innovative low parasitic high performance package based on copper clip technology for high power applications. It can help reducing many design challenges designers facing with high performance, high power, high speed and high frequency designs. This high reliability technology also help easy SMD manufacturing.
Next generation HV power GaN FET technology to combined with innovative low parasitic high performance package based on copper clip technology for high power applications. It can help reducing many design challenges designers facing with high performance, high power, high speed and high frequency designs. This high reliability technology also help easy SMD manufacturing.
Ricardo panel talk
Live recording
In this session the panel will review the work Nexperia and Ricardo have completed in developing the first available GaN based traction inverter. Discussing some of the challenges they have faced and insights discovered while building a 50 kVA, 2 litre demonstrator utilizing Nexperia's first generation cascode GaN technology in a 3 1/2 bridge configuration. Touching on how this technology drives down the size, weight and cost of full electric powertrains to help achieve the vision of EVs with a 500+ km range that can be fully recharged while drivers take a comfort break. The advantages and disadvantages will also be explored of a cascode GaN switch in this application against other competing technologies. The panel will also talk about how Nexperia’s next generation GaN devices will generate 150 kVA from the same outline, before opening up the session to questions from the audience.
In this session the panel will review the work Nexperia and Ricardo have completed in developing the first available GaN based traction inverter. Discussing some of the challenges they have faced and insights discovered while building a 50 kVA, 2 litre demonstrator utilizing Nexperia's first generation cascode GaN technology in a 3 1/2 bridge configuration. Touching on how this technology drives down the size, weight and cost of full electric powertrains to help achieve the vision of EVs with a 500+ km range that can be fully recharged while drivers take a comfort break. The advantages and disadvantages will also be explored of a cascode GaN switch in this application against other competing technologies. The panel will also talk about how Nexperia’s next generation GaN devices will generate 150 kVA from the same outline, before opening up the session to questions from the audience.
Benefits of using power GaN FETs in Solar inverters – Quick Learning
Using GaN FETs in 80 plus titanium power supply units – Quick Learning
Quick Learning: Using Power GaN FETs in AC/DC converters
Quick Learning: Cascode Vs E-Mode – which to use in your Power GaN FET?
Quick Learning: What is CCPAK? (Surface-mount packaging for high-power FETs)
Nexperia partners with Ricardo to develop GaN based EV inverter design
Nexperia GaN FETs
Quick Learning: Moving from silicon to GaN: Design considerations
Quick Learning: How to read a GaN FET datasheet