Whether for low- or high-power conversion applications, Power Gallium Nitride FETs (GaN FETs) are increasingly making their way into mainstream markets. For a variety of 650 V and 150 V applications GaN FETs deliver the fastest transition / switching capability (highest dv/dt and di/dt), and best power efficiency. Additionally, Nexperia power GaN FETs bring enhanced power density through reduced conduction and switching losses.
Targeted at high-voltage / high-power applications, Nexperia cascode GaN FETs provide exceptionally high switching frequency capability for 650 V applications and the robust low on-resistance particularly suited for automotive electrification. For 650 V and ≤ 150 V industrial and consumer applications, Nexperia e-mode GaN FETs provide the balance between switching performance and robustness.
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Application note (6) |
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|---|---|---|---|
| File name | Title | Type | Date |
| AN90041 | Gate drive circuit design for Nexperia 650 V Enhancement mode (e-mode) GaN FETs | Application note | 2023-05-09 |
| AN90030_translated | ハーフブリッジ・トポロジーにおけるNexperia製GaN FETの並列 | Application note | 2023-04-03 |
| AN90030 | Paralleling of Nexperia cascode GaN FETs in half-bridge topology | Application note | 2023-03-22 |
| AN90005 | Understanding Power GaN FET data sheet parameters | Application note | 2020-06-08 |
| AN90006 | Circuit design and PCB layout recommendations for GaN FET half bridges | Application note | 2019-11-15 |
| AN90004 | Probing considerations for fast switching applications | Application note | 2019-11-15 |
Leaflet (4) |
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| File name | Title | Type | Date |
| nexperia_document_leaflet_GaN_CCPAK_2023_CHN | CCPAK GaN FETs Chinese | Leaflet | 2023-10-25 |
| nexperia_document_leaflet_GaN_CCPAK_2023 | CCPAK GaN FETs | Leaflet | 2023-10-25 |
| nexperia_document_leaflet_GaNFETs_2023_CHN | Power GaN FETs leaflet | Leaflet | 2023-10-25 |
| nexperia_document_leaflet_GaNFETs_2023 | Power GaN FETs leaflet | Leaflet | 2023-10-25 |
Marcom graphics (1) |
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| File name | Title | Type | Date |
| TO-247_SOT429_mk | plastic, single-ended through-hole package; 3 leads; 5.45 mm pitch; 20.45 mm x 15.6 mm x 4.95 mm body | Marcom graphics | 2019-02-19 |
Other type (1) |
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| File name | Title | Type | Date |
| GaNFET_evaluation_board_Terms_Of_Use | GaN FET EVALUATION BOARD TERMS OF USE | Other type | 2023-10-10 |
Selection guide (1) |
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| File name | Title | Type | Date |
| Nexperia_Selection_guide_2023 | Nexperia Selection Guide 2023 | Selection guide | 2023-05-10 |
Technical note (1) |
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| File name | Title | Type | Date |
| TN90004 | An insight into Nexperia Power GaN technology – Applications, quality, reliability and scalability | Technical note | 2020-07-21 |
User manual (1) |
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| File name | Title | Type | Date |
| Nexperia_document_book_MOSFETGaNFETApplicationHandbook_2020 | MOSFET & GaN FET Application Handbook | User manual | 2020-11-05 |
White paper (5) |
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| File name | Title | Type | Date |
| nexperia_whitepaper_gan_need_for_efficient_conversion_Japanese | Whitepaper: GaN need for efficient conversion (Japanese) | White paper | 2021-05-20 |
| nexperia_whitepaper_gan_need_for_efficient_conversion_CHN | 白皮书: 功率GaN技术： 高效功率转换的需求 | White paper | 2020-08-17 |
| nexperia_whitepaper_gan_need_for_efficient_conversion | White paper: Power GaN technology: the need for efficient power conversion | White paper | 2020-07-23 |
| nexperia_whitepaper_gan_robustness_aecq101_CN | Whitepaper: GaN FET technology and the robustness needed for AEC-Q101 qualification – Chinese (650 V GaN FET技术可提供 出色效率，以及AEC-Q101 认证所需的耐用性) | White paper | 2020-07-15 |
| nexperia_whitepaper_gan_robustness_aecq101 | White paper: GaN FET technology and the robustness needed for AEC-Q101 qualification | White paper | 2020-06-08 |
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