ASFETs with enhanced dynamic current sharing are designed to meet the demands of high-power parallel MOSFET applications, ensuring balanced load distribution and reliable operation in BLDC and other demanding inductive systems:
- No VGS(th) matching required – simplifies design and production.
- Enhanced current sharing with low ΔID – ensures balanced load in parallel applications.
- Low RDS(on) and reduced VGS(th) spread – improves efficiency and performance.
- High current capability – 286 A continuous ID with avalanche rating and 100% tested for reliability.
- Compact, robust package – 8x8 LFPAK88 rated to 175 °C for space-constrained, high-power applications.
Featured products
Featured documents
Latest videos
Products
| Type number | Description | Status | Quick access |
|---|---|---|---|
| PSMN1R9-80SSJ | N-channel 80 V, 1.9 mOhm ASFET with enhanced dynamic current sharing in LFPAK88 | Production | |
| PSMN2R3-100SSJ | N-channel 100 V, 2.3 mOhm ASFET with enhanced dynamic current sharing in LFPAK88 | Production |
Visit our documentation center for all documentation
Application note (3) |
|||
|---|---|---|---|
| File name | Title | Type | Date |
| AN90059.pdf | Power MOSFET gate driver fundamentals | Application note | 2025-09-01 |
| AN90016.pdf | Maximum continuous currents in NEXPERIA LFPAK power MOSFETs | Application note | 2025-09-01 |
| AN90001.pdf | Designing in MOSFETs for safe and reliable gate-drive operation | Application note | 2024-10-28 |
Marcom graphics (1) |
|||
| File name | Title | Type | Date |
| RS3210_nexperia_image_stock_battery_powered_forklift_2020-scr.jpg | Nexperia image Battery powered forklift | Marcom graphics | 2023-06-08 |
Please contact us if you have any questions. If you are in need of design support, please fill in the technical support form, we will get back to you shortly.
Please visit our community forum or contact us for further support.