ASFETs with enhanced dynamic current sharing are designed to meet the demands of high-power parallel MOSFET applications, ensuring balanced load distribution and reliable operation in BLDC and other demanding inductive systems:
- No VGS(th) matching required – simplifies design and production.
- Enhanced current sharing with low ΔID – ensures balanced load in parallel applications.
- Low RDS(on) and reduced VGS(th) spread – improves efficiency and performance.
- High current capability – 286 A continuous ID with avalanche rating and 100% tested for reliability.
- Compact, robust package – 8x8 LFPAK88 rated to 175 °C for space-constrained, high-power applications.
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Products
| Type number | Description | Status | Quick access |
|---|---|---|---|
| PSMN1R9-80SSJ | N-channel 80 V, 1.9 mOhm ASFET with enhanced dynamic current sharing in LFPAK88 | Production | |
| PSMN2R3-100SSJ | N-channel 100 V, 2.3 mOhm ASFET with enhanced dynamic current sharing in LFPAK88 | Production |
Visit our documentation center for all documentation
Application note (3) |
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|---|---|---|---|
| File name | Title | Type | Date |
| AN90059.pdf | Power MOSFET gate driver fundamentals | Application note | 2025-09-10 |
| AN90016.pdf | Maximum continuous currents in NEXPERIA LFPAK power MOSFETs | Application note | 2025-09-08 |
| AN90001.pdf | Designing in MOSFETs for safe and reliable gate-drive operation | Application note | 2025-09-08 |
Marcom graphics (1) |
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| File name | Title | Type | Date |
| RS3210_nexperia_image_stock_battery_powered_forklift_2020-scr.jpg | Nexperia image Battery powered forklift | Marcom graphics | 2023-06-08 |
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