N-channel 80 V, 10 mΩ logic level MOSFET in LFPAK56

Logic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product is designed and qualified for use in a wide range of power supply & motor control equipment.

Orderable parts

Type number Orderable part number Ordering code (12NC) Package Buy from distributors
PSMN010-80YL PSMN010-80YLX 934069899115 SOT669 Order product

Features and benefits

  • Advanced TrenchMOS provides low RDSon and low gate charge

  • Logic level gate operation

  • Avalanche rated, 100% tested

  • LFPAK provides maximum power density in a Power SO8 package


  • Synchronous rectification in power supply equipment

  • Chargers & adaptors with Vout< 10 V

  • Fast charge & USB-PD applications

  • Battery powered motor control

  • LED lighting & TV backlight


Type numberPackage versionPackage nameProduct statusChannel typeNr of transistorsVDS [max] (V)RDSon [max] @ VGS = 10 V (mΩ)RDSon [max] @ VGS = 5 V (mΩ)Tj [max] (°C)ID [max] (A)QGD [typ] (nC)QG(tot) [typ] @ VGS = 10 V (nC)Ptot [max] (W)Qr [typ] (nC)VGSth [typ] (V)Automotive qualifiedCiss [typ] (pF)Coss [typ] (pF)Date
PSMN010-80YLSOT669LFPAK56; Power-SO8ProductionN18010111758413.284.7194321.7N48793242015-10-12

PCB Symbol, Footprint and 3D Model

Model NameDescription


Type numberOrderable part number, (Ordering code (12NC))StatusMarkingPackagePackage informationReflow-/Wave solderingPacking
( 9340 698 99115 )
LFPAK56; Power-SO8

Environmental information

Type numberOrderable part numberChemical contentRoHSRHF-indicator
Quality and reliability disclaimer

Documentation (17)

File nameTitleTypeDate
PSMN010-80YLN-channel 80 V, 10 mΩ logic level MOSFET in LFPAK56Data sheet2018-04-03
AN10273Power MOSFET single-shot and repetitive avalanche ruggedness ratingApplication note2022-06-20
AN11158Understanding power MOSFET data sheet parametersApplication note2020-07-06
AN11160Designing RC SnubbersApplication note2023-02-03
AN11156Using Power MOSFET Zth CurvesApplication note2021-01-04
AN11243Failure signature of Electrical Overstress on Power MOSFETsApplication note2017-12-21
AN11261RC Thermal ModelsApplication note2021-03-18
AN11599Using power MOSFETs in parallelApplication note2016-07-13
T6_SOT669_PSMN010-80YL_Nexperia_Quality_documentPSMN010-80YL Quality documentQuality document2022-10-13
Reliability_information_t6_sot669Reliability qualification information Quality document2022-10-13
PSMN010-80YLPSMN010-80YL SPICE modelSPICE model2016-03-30
TN00008Power MOSFET frequently asked questions and answersTechnical note2023-01-12
PSMN010-80YL_RC_Thermal_ModelPSMN010-80YL Thermal design modelThermal design2021-01-18
PSMN010-80YLPSMN010-80YL Thermal modelThermal model2016-03-30
SOT669_115LFPAK56; Reel pack for SMD, 7"; Q1/T1 product orientationPacking information2022-05-10
REFLOW_BG-BD-1Reflow soldering profileReflow soldering2021-04-06
WAVE_BG-BD-1Wave soldering profileWave soldering2021-09-08


If you are in need of design/technical support, let us know and fill in the answer form, we'll get back to you shortly.


File nameTitleTypeDate
PSMN010-80YLPSMN010-80YL SPICE modelSPICE model2016-03-30
PSMN010-80YL_RC_Thermal_ModelPSMN010-80YL Thermal design modelThermal design2021-01-18
PSMN010-80YLPSMN010-80YL Thermal modelThermal model2016-03-30

PCB Symbol, Footprint and 3D Model

Model NameDescription

Ordering, pricing & availability

Type numberOrderable part numberOrdering code (12NC)PackingPacking quantityBuy online
PSMN010-80YLPSMN010-80YLX934069899115SOT669_115- Order product


As a Nexperia customer you can order samples via our sales organization or directly via our Online Sample Store: https://extranet.nexperia.com.

Sample orders normally take 2-4 days for delivery.

If you do not have a direct account with Nexperia our network of global and regional distributors is available and equipped to support you with Nexperia samples.

How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.