N-channel 100 V, 2.3 mOhm Application Specific MOSFET (ASFET) in LFPAK88

N-channel enhancement mode MOSFET in a LFPAK88 package qualified to 175 °C. Part of Nexperia's Application Specific MOSFETs (ASFETs) for enhanced dynamic current sharing in parallel. The PSMN2R3-100SSJ delivers very low RDSon and high current capability along with enhanced dynamic current sharing in a high-reliability copper-clip LFPAK88 package. The dynamic current sharing feature is a passive solution and inherent in the optimised design and does not rely upon special selections or control and feedback methods.

Features and benefits

  • Fully enhanced for dynamic current sharing in parallel

  • Suitable for 10 V gate drive

  • Low RDSon for low I²R conduction losses

  • LFPAK88 package for applications that demand the highest performance and reliability


  • High power motor drives

  • Fork lift trucks and material moving equipment

  • Industrial drives and Automation

  • High power tools and machines

  • E-bike and mobility

  • E-Fuse and high current switching

PCB Symbol, Footprint and 3D Model

Model NameDescription


If you are in need of design/technical support, let us know and fill in the answer form, we'll get back to you shortly.

PCB Symbol, Footprint and 3D Model

Model NameDescription

How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.