Press releases

Nexperia delivers first ESD protection device for USB4

TrEOS diodes fully support USB4TM standard; devices feature low clamping, low capacitance, low ...

Nexperia partners with Ricardo to develop GaN-based ...

Nexperia’s AEC-Q101-approved GaN devices to feature in technology demonstrator by leading ...

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Nexperia launches pioneering silicon-based ...

Nexperia, the expert in discrete and MOSFET components and analog & logic ICs, today announced ...

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Nexperia extends market-leading low RDS(on) MOSFET ...

Safe Operating Area, Drain Current and Gate Charge also optimised

New ownership opens up opportunities for Nexperia

Wingtech obtains controlling stake in Nexperia

Nexperia introduces industry’s fastest Common Mode ...

Widest differential passband; high surge robustness and low clamping

Nexperia launches high-efficiency GaN FET with ...

Proven process, robust and scalable, ready for volume applications

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MJD bipolar transistors up to 8 A widen Nexperia’s ...

High quality, high reliability, AEC-Q101-qualified devices

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Nexperia secures $1,500M financing to fund future ...

Leading discrete semiconductor company’s refinancing fully supported

Nexperia honoured with Bosch Global Supplier Award

Winners are ‘the cream of the crop’ sharing competitive objectives and achieving outstanding ...