NextPower 80 V, 2.4 mOhm, 231 A, N-channel MOSFET in LFPAK56E package

NextPower 80 V, standard level gate drive MOSFET. Qualified to 175 °C and recommended for industrial and consumer applications.

Features and benefits

  • Low Qrr for higher efficiency and lower spiking

  • 231 A ID(max) – demonstrated continuous current rating

  • Low QG × RDSon FOM for high efficiency switching applications

  • Strong avalanche energy rating (Eas)

  • Avalanche rated and 100% tested

  • Ha-free and RoHS compliant LFPAK56E package


  • Synchronous rectifier in AC-DC and DC-DC

  • Primary side switch in DC-DC

  • BLDC motor control

  • USB-PD adapters

  • Full-bridge and half-bridge applications

  • Flyback and resonant topologies


Type numberPackage versionPackage nameProduct statusChannel typeNr of transistorsVDS [max] (V)RDSon [max] @ VGS = 10 V (mΩ)Tj [max] (°C)ID [max] (A)QGD [typ] (nC)QG(tot) [typ] @ VGS = 10 V (nC)Ptot [max] (W)Qr [typ] (nC)VGSth [typ] (V)Automotive qualifiedCiss [typ] (pF)Coss [typ] (pF)Date
PSMN2R6-80YSFSOT1023LFPAK56E; Power-SO8DevelopmentN1802.41752311583294273N615017362023-04-23

PCB Symbol, Footprint and 3D Model

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Documentation (2)

File nameTitleTypeDate
PSMN2R6-80YSFNextPower 80 V, 2.4 mOhm, 231 A, N-channel MOSFET in LFPAK56E packageData sheet2023-09-08
REFLOW_BG-BD-1Reflow soldering profileReflow soldering2021-04-06


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PCB Symbol, Footprint and 3D Model

Model NameDescription

How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.