Meet with Nexperia at PCIM 2024
Nuremberg Exhibition Center, Jun 11-13.
Hall #9
Booth #412
Empowering innovation from engineer to engineer.
As the leading international exhibition and conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, the PCIM Europe is the international meeting point for the electronics industry.
Explore our live demos
Analog & power signalling
For low-power applications particularly in IoT and consumer applications, maximising efficiency is critical. By integrating analog and power functions into single ICs, we provide innovative and efficient solutions that improve system performance while reducing BOM cost.
- Nexperia's turnkey solution for high power density design for 65 W GaN PD chargers.
- Synchronous DC/DC buck converter Solution with Nexperia’s gate driver and power MOSFETs.
- 40 V integrated DC/DC buck converter & LDO showcasing linear & switcher performance.
- Evaluation board for demonstrating pulsed load capability from coin batteries.
Packaging
Our rich history of innovation in semiconductor packaging has delivered multiple industry standard footprints from the SOT23 to LFPAK56. Our expertise in copper clip and miniaturization ensures designer have the right power package for the job.
- Power MOSFETs with low RDS(on) and continuous high current capability.
- Thermal Showdown: Highlighting Nexperia's power diode packaging technology for miniaturization and power density.
- Conduction, linear mode, and avalanche capability of MOSFETs in a power switch.
Silicon Power
At the heart of all this innovation lies our proven power technologies. And we continue to drive performance and quality across our entire power portfolios. Ensuring you have the products you need to address your specific application and power requirements.
- LFPAK power MOSFETs increasing to highest current in BLDC motor control.
- Linear mode operation of paralleled high current MOSFETs in a power switch.
- 100 V Diodes delivering lowest losses for optimal bootstrapping applications.
Wide-bandgap FETs
When it comes to power FETs, our wide-bandgap devices (GaN, SiC) are setting the performance standard. Whether it’s 100 V, 650 V or 1200 V, our latest products are helping power tomorrow’s innovations.
- Unveiling exceptional RDS(on) temperature stability with Nexperia's first SMD SiC MOSFETs in a h-bridge configuration
- Half-bridge evaluation board for benchmarking E-mode GaN FET switching performance.
- Implementing the bridgeless totem-pole PFC architecture with a standard boost PFC controller.
Support
Designing today is not just about having the right power products and innovative power technologies. We also create the most advanced tools to provide knowledge, learning and support for design engineers. From more traditional application handbooks, evaluation boards and models to innovative interactive application notes and pioneering interactive datasheets. Putting you in charge of the information you need to speed up your design process.
Join us for one of our live talks.
Panel Discussion: GaN Wide Bandgap, The Future of Power
Description: Your update on the latest trends with GaN.
Stage: Technology
Date/Time: 12th June, 2:20pm - 2:20pm
Joined by: Dilder Chowdhury, Director Strategic Marketing, GaN FETs
Galvanic isolation for automotive & industrial electronic systems
Description: The demand for galvanic isolation has grown with the acceleration of applications such as grid infrastructure, motor drives, factory automation, electric vehicles (EVs), EV charging stations, renewable energy systems, and industrial power supplies. In this talk, Nexperia will cover the challenges, design considerations, and functionality required for isolated communications and isolated power in high voltage systems to improve system safety, efficiency, design cycle time, and performance. We will discuss the techniques for galvanic isolation using Nexperia's new digital isolator and transformer driver products for high voltage power designs.
Stage: Exhibitor
Date/Time: 13th June, 11:40am - 12:00pm
Presented by: I.K. Anyiam, product marketing manager, IC Solutions
Accelerating E-Mobility and Industrial applications: Nexperia's GaN FETs and SiC offerings leading the charge.
Description: Gallium Nitride (GaN) and Silicon Carbide (SiC) are game-changers for e-mobility, Industrial and consumer applications offering lower on resistance and faster switching for enhanced power conversion efficiency. Their ability to operate at higher frequencies reduces the size and weight of the power systems, while their high-power density enables more compact designs crucial for any power conversion applications . Discover how Nexperia's GaN and SiC technologies are revolutionizing e-mobility, Industrial and consumer applications with faster charging, longer ranges, higher efficiency with compact solutions and unmatched reliability. Explore the transformative advantages of Nexperia's portfolios, from lightning-fast switching to unparalleled power density, driving innovation in the Industrial and automotive applications.
Stage: E-Mobility
Date/Time: 13th June, 1:20pm - 1:40pm
Presented by: Dilder Chowdhury, Director Strategic Marketing, GaN FETs